Allicdata Part #: | MRF8S9202GNR3-ND |
Manufacturer Part#: |
MRF8S9202GNR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 70V 920MHZ OM780-2G |
More Detail: | RF Mosfet N-Channel 28V 1.3A 920MHz 19dB 58W OM-78... |
DataSheet: | MRF8S9202GNR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 920MHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 58W |
Voltage - Rated: | 70V |
Package / Case: | OM-780-2 |
Supplier Device Package: | OM-780-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8S9202GNR3 is a type of Field Effect Transistor (FET) that is used in radio frequency (RF) applications. This FET is normally used in transmitter and receiver applications, but it can also be used in amplifiers and switches. It is designed to be used in frequencies ranging from 50-900 MHz, making it an ideal choice for many different types of RF applications.
The MRF8S9202GNR3 is an n-channel enhancement mode laterally diffused MOSFET (LDMOSFET). This type of device is specifically designed for power applications where efficiency, low transition time, and low gate-source capacitance are important. There is an internal gate resistance which makes the signal recovery and turn-on time much faster than a regular MOSFET, and it also reduces the switching losses.
The MRF8S9202GNR3 has a maximum transconductance of 16 mS and a maximum drain-source voltage of 25 V. It also has a drain efficiency of 0.89, which means it can handle higher power levels than most other FETs at the same frequency. The gate threshold voltage is -3.5 V, which makes it possible to control the gate of this device with a low voltage control signal.
The working principle of the MRF8S9202GNR3 is relatively simple. When a voltage is applied to the gate, the semiconductor channel between the source and the drain becomes conductive. This channel then allows electrons to flow from the source to the drain, which creates a current. This current can then be used to provide power for various applications.The MRF8S9202GNR3 is used in RF applications where a high power and low on-resistance are required. It can be used in amplifiers, switches, and transmitters, and it is also used in high-efficiency power supplies. The high transconductance and internal gate resistance make it an ideal choice for applications where fast switching and low transition times are important. This FET can also be used as an impedance matching device to make sure the signal is transmitted with the maximum possible efficiency.
In conclusion, the MRF8S9202GNR3 is a type of laterally diffused MOSFET (LDMOSFET) that is designed for radio frequency (RF) applications. It has a maximum transconductance of 16 mS and a maximum drain-source voltage of 25 V, which makes it suitable for a variety of power applications. The internal gate resistance makes it an ideal choice for applications where fast switching and low transition time are important. It is used in amplifiers, switches, and transmitters, and it can also be used in high-efficiency power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF8S21100HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI780S... |
MRF8S9120NR3 | NXP USA Inc | -- | 250 | FET RF 70V 960MHZ QM780-2... |
MRF8P9040GNR1 | NXP USA Inc | 11.99 $ | 1000 | FET RF 2CH 70V 960MHZ TO-... |
MRF8P9040NR1 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ TO2... |
MRF8HP21080HR3 | NXP USA Inc | 35.32 $ | 1000 | FET RF 2CH 65V 2.17GHZ NI... |
MRF8S7170NR3 | NXP USA Inc | 48.33 $ | 1000 | FET RF 70V 748MHZ OM780-2... |
MRF8S9200NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 940MHZ OM780-2... |
MRF8P9210NR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ OM7... |
MRF8S18120HSR3 | NXP USA Inc | 62.35 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8P20140WHR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WGHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8S7235NR3 | NXP USA Inc | 66.77 $ | 1000 | FET RF 70V 728MHZ OM780-2... |
MRF8S9232NR3 | NXP USA Inc | 68.14 $ | 1000 | FET RF 70V 960MHZ OM780-2... |
MRF8S18210WGHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S18210WHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S9220HSR3 | NXP USA Inc | -- | 1000 | FET RF 70V 960MHZ NI780SR... |
MRF8P20165WHR3 | NXP USA Inc | 74.91 $ | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8P20165WHSR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8S9170NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 920MHZ OM780-2... |
MRF8VP13350NR3 | NXP USA Inc | 94.11 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8VP13350GNR3 | NXP USA Inc | 95.33 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8P8300HR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8P8300HSR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8VP13350NR5 | NXP USA Inc | 136.5 $ | 1000 | RF POWER LDMOS TRANSISTOR... |
MRF8P9300HSR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ NI-... |
MRF8P29300HR6 | NXP USA Inc | 249.81 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8P29300HSR6 | NXP USA Inc | 250.43 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8372 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372G | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372MR1 | Microsemi Co... | -- | 1000 | TRANS NPN 16V 200MARF Tra... |
MRF8S18120HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S9100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
MRF8S9100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...