Allicdata Part #: | MRF8S9220HR5-ND |
Manufacturer Part#: |
MRF8S9220HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 70V 960MHZ NI780H |
More Detail: | RF Mosfet LDMOS 28V 1.6A 960MHz 19.4dB 65W NI-780 |
DataSheet: | MRF8S9220HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 19.4dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.6A |
Power - Output: | 65W |
Voltage - Rated: | 70V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF8S9220 |
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MRF8S9220HR5 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for use in the radio frequency (RF) industry. The transistors operate at a frequency range of 45 MHz to 3 GHz and can produce peak output powers of up to 500W. These transistors offer a number of advantages over traditional silicon-based transistors, including higher efficiency, higher power output, lower switching time and better thermal performance. As such, these devices have become increasingly popular for use in a variety of RF applications.
The working principle of MRF8S9220HR5 is based on the physical property of a transistor known as “field-effect”. When a transistor is in the active region, a positive voltage is applied to the gate terminal of the device which causes a field of charge to be formed in the channel. This creates a barrier between the source and the drain and causes current to flow between the two. The voltage applied to the gate terminal can then be increased or decreased to control the current flow and thus the output power.
MRF8S9220HR5 has a wide range of applications in the RF industry, such as cellular base-stations, airport ground systems, radar systems, satellite communication and navigation systems, and more. The devices are also used in a variety of devices such as microwave ovens, digital radios, GPS devices, and cell phones. In addition, the transistors are suitable for use in other high-frequency applications such as broadcasting and military communication systems.
One of the major advantages of the MRF8S9220HR5 over traditional silicon-based transistors is its low power and noise figure. Since GaN transistors are inherently faster and have a lower noise figure, they can be used in a wide variety of designs. Furthermore, the transistors have a high power density and can support higher power levels than silicon-based devices, making them suitable for use in large-scale systems. The transistors also have a low gate charge and have better switching speed performance, thus offering increased efficiency.
Overall, the MRF8S9220HR5 is an ideal choice for a wide range of radio-frequency applications. The transistors offer a number of advantages over traditional silicon-based transistors, such as higher power output, higher efficiency, lower switching time and better thermal performance. Furthermore, the transistors have a wide range of applications in the RF industry, and can be used in a number of devices such as microwave ovens, digital radios, GPS devices, and cell phones. As such, these devices are an excellent choice for radio-frequency applications that require high performance.
The specific data is subject to PDF, and the above content is for reference
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