Allicdata Part #: | MRF904-ND |
Manufacturer Part#: |
MRF904 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 15V 30MA TO-72 |
More Detail: | RF Transistor NPN 15V 30mA 4GHz 200mW Through Hole... |
DataSheet: | MRF904 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 4GHz |
Noise Figure (dB Typ @ f): | 1.5dB @ 450MHz |
Gain: | 6.5dB ~ 10.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-72 |
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MRF904 is a high performance NPN bipolar junction transistor (BJT). It is specifically designed for use in high power and high frequency radio frequency (RF) applications such as VHF and UHF communication. The device is suited for linear and saturated operation in HF, VHF, and UHF amplifier stages. It is employed in equipment intended for operation in the range of 10 to 500 watts at frequencies up to 500 MHz.
This transistor is comprised of two sections connected in a common-collector fashion. The first is the base-collector junction, which is usually referred to as the emitter. The second section is the base-emitter junction, which is commonly referred to as the collector. The signal current travels into the collector-emitter junction and is then amplified through the base-collector junction. The amplified signal is then output by the collector.
MRF904 has excellent specifications, providing a good linearity, low noise figure and low DC power consumption. It offers a very high gain level when operated in Linear and Saturated modes, and a high breakdown voltage. The gain boosts as the operating frequency increases to attain maximum gain at 250 MHz, enabling efficient performance for narrowband applications like FM broadcast.
MRF904\'s operation is quite simple. The input signal is applied to the base of the transistor, which is then amplified by the junction of the base-collector. The power is then output from the collector. This process is often referred to as common-collector configuration because the output is taken from the collector side. In addition to increasing the voltage, the amplified signal is also increased in power. To ensure safe operation and reduce damage to the device, the operating temperature and voltage ratings should be taken into consideration.
When operated in Linear mode, the current gain of MRF904 ranges between 30 and 100. The device also offers a wide dynamic range with excellent low noise figure. On the other hand, when in saturation mode, the current gain can range between 150 and 250. In terms of size, this transistor is quite compact, measuring 12.6mm in width and 8.5mm in height. This makes it well suited for small-scale applications.
In summary, MRF904 is a high performance NPN bipolar junction transistor, specifically designed for power and high frequency RF applications. It has excellent specifications, providing a good linearity, low noise figure and low DC power consumption. Its wide dynamic range enables efficient operation for narrowband applications like FM broadcast, as well as its size make it suitable for small-scale applications.
The specific data is subject to PDF, and the above content is for reference
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