MRF9085LR5

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The MRF9085LR5 is an integrated device used in a wide range of RF applications. It is part of Motorola’s RF device portfolio, which range from general purpose to high performance and specialty products. MRF9085LR5 is a N-channel Enhancement-Mode (E-Mode) silicon gate MOSFET (metal oxide semiconductor field effect transistor). It is an intermediate range power MOSFET device and it can operate at frequencies of up to 900 MHz. It is designed to provide high power gain and low distortion over the frequency range from 4 to 900 MHz.

MRF9085LR5 is widely used in radio frequency (RF) communications. It provides a low cost, low noise amplifier with high gain over the frequency range of 4 to 900 MHz. It is widely used for RF applications. It offers high frequency, high power performance and is ideal for applications that require high linearity. It is also suitable for low-noise amplifiers, linear and power amplifiers, as well as wireless amplifiers and other RF applications including cellular, handsets and industrial radios.

The working principle of the MRF9085LR5 is based on the enhancement-mode operation of the MOSFET. The device consists of two terminals, the source and the drain, and is normally operated in an N-channel configuration to allow current to flow between the two. In the on-state of the device, the gate-source voltage (Vgs) is increased to turn on the MOSFET. The voltage applied to the gate controls the current that can flow through the device, allowing it to be used as an amplifying element. When the current is high, the device is “on” and the current can flow through the drain, resulting in amplified gain. When the current is low, the device is “off”, and no current can flow through the drain.

MRF9085LR5 is typically used in a variety of applications such as RF communications, radio receivers, and other industrial radio applications. It is especially useful in radio applications which require high-frequency, low-noise performance, such as cellular base station amplifiers, and handsets. Additionally, it is also suitable for high power applications such as power amplifiers and linear amplifiers. Its high frequency capabilities make it an ideal choice for such applications. It is available in a variety of package types, allowing it to be used in even the most space-constrained designs.

In conclusion, the MRF9085LR5 is a N-channel Enhancement-Mode (E-Mode) silicon gate MOSFET device from Motorola that is designed for use in a variety of radio frequency (RF) applications. It offers outstanding wireless performance and high frequency amplifying characteristics. Its high frequency operation makes it suitable for applications such as cellular base station amplifiers, handsets, and power amplifiers. Additionally, it is available in a range of package types and provides a low cost, low noise, and highly linear solution for RF applications.

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