Allicdata Part #: | MRF9085LSR5-ND |
Manufacturer Part#: |
MRF9085LSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 880MHZ NI-780S |
More Detail: | RF Mosfet LDMOS 26V 700mA 880MHz 17.9dB 90W NI-780... |
DataSheet: | MRF9085LSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 17.9dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 700mA |
Power - Output: | 90W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF9085 |
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MRF9085LSR5 is one of the most versatile and commonly used Field Effect Transistors (FETs). It is a common source, lateral N-channel enhancement mode, FET used in various RF and microwave applications. The device is a non-saturated device, which means that its drain current and drain-source voltage can be adjusted depending on the supply voltage or gate-source voltage. Additionally, the device is capable of being used at higher frequencies and power levels than other traditional transistors.
MRF9085LSR5 is designed for RF switching, wide-band signal amplification and signal transmission. The FET consists of internally matched gate drain trenches, providing a good input return loss and excellent stability when operated in various signal conditions. The device is also capable of very low current drain, which makes it ideal for battery operated applications. Its low threshold voltage allows the device to switch quickly, while ensuring reliable on/off switching.
The working principle of the MRF9085LSR5 relies on the control of current flow, between the gate and the source in response to a voltage applied to the gate terminal. The device exhibits normal p-type, or negative resistance behavior, such that the drain current decreases with increasing source to drain voltage. The device has two main sections, the gate and the source, where the gate is responsible for controlling current flow from the source to the drain, while the source is responsible for controlling drain current.
The gate and source are both connected to the gate voltage, VGS. When the gate voltage gets lower than the threshold voltage, VGSth, the FET is OFF, which means that no current flows through the FET and the drain to source voltage is low. On the other hand, when the gate voltage is higher than the threshold voltage, the FET is ON, which means that current flows through the FET and the drain to source voltage is high.
The drain current of the FET is controlled by the source to gate voltage, VGS, and is dependent on the gain of the FET. The value of the drain current can be increased or decreased by increasing or decreasing the VGS, which means that the FET can be used for adjustable gain amplification. The device also has a very low input capacitance, which allows it to be used in high frequency applications.
In conclusion, the MRF9085LSR5 is an extremely versatile Field Effect Transistor, capable of being used for various RF applications. It is designed for high frequency operation, with adjustable gain and low current drain. This FET is well suited for switching, amplification and signal transmission applications.
The specific data is subject to PDF, and the above content is for reference
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