MRF9180R5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	880MHz
Gain:	17.5dB
Voltage - Test:	26V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.4A
Power - Output:	170W
Voltage - Rated:	65V
Package / Case:	NI-1230
Supplier Device Package:	NI-1230

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MRF9180R5 is a type of Field-Effect Transistor (FET), a type of transistor used for amplifying or switching electronic signals. It is also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) due to its architecture. It falls in the subsection of FETs known as Radio Frequency (RF) transistors which are capable of providing amplification of signals in the kHz to MHz range.The MRF9180R5 is a commonly used type of RF transistor with an industry standard of approximately 18V. It is constructed on a Gallium Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) that offers high power operation, high gain, low noise figure and good linearity making them suitable for applications involving medical, military and commercial communications.MRF9180R5 features symmetrical pins to make it easier to install on both sides of a circuit board. It also has the ability to be mounted to the board or used as an external component. The device also features a thermal pad which dissipates the heat generated by the device.A wide range of applications are possible with the MRF9180R5, such as amplifiers for wireless networking, cable TV, satellite antenna systems and wireless broadband networks. It is also used in motor speed control and automated farming applications.The working principle of the MRF9180R5 is based on the concept of source and drain. It is a three terminal device having source, drain and gate terminals. The source and drain terminals are connected to the devices that are to be amplified and the gate terminal is connected to the control voltage (Vgs). The voltage applied to the gate terminal causes an inversion of the channel in between source and drain which results in a conducting channel known as an inversion layer. This inversion layer provides a current flow between the source and drain. The current flow is proportional to the control voltage Vgs applied to the gate terminal.This transistor is a high power, high gain device operating at a Frequency of 2.3 GHz. The maximum drain current it can handle is 8 Amps with a maximum power dissipation of 43 Watts.Overall, the MRF9180R5 is a high-performance RF transistor device capable of operating in the MHz range making it suitable for a variety of applications. It has symmetrical pins for easier installation, a thermal pad to dissipate the heat and a high power, high gain operation. Its working principle is based on the concept of source and drain and provides a current flow that is proportional to the control voltage applied on the gate terminal.

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