Allicdata Part #: | MRF9002NR2-ND |
Manufacturer Part#: |
MRF9002NR2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 960MHZ 16-PFP |
More Detail: | RF Mosfet LDMOS 26V 25mA 960MHz 18dB 37dBm 16-PFP |
DataSheet: | MRF9002NR2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 25mA |
Power - Output: | 37dBm |
Voltage - Rated: | 65V |
Package / Case: | 16-SOP (0.276", 7.00mm Width) |
Supplier Device Package: | 16-PFP |
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MRF9002NR2 MOSFETs are designed to meet the needs of next generation high-performance RF amplifiers. It is designed to provide a stable performance in conjunction with high gain, excellent linearity, and low noise. The MRF9002NR2 is a top choice for use in avionics, telecommunications, and other mission-critical applications. The MRF9002NR2 is optimized for use in broadcast, satellite, and industrial systems.
The MRF9002NR2 is a field effect transistor (FET) and a member of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) family. It consists of a source, a drain and a gate which are all insulated from each other. It primarily works as an amplifier, but it can perform several other functions as well. When a voltage is applied to the gate, electrons flow between the source and the drain and a current can be established. This is known as the drain current and is proportional to the voltage applied to the gate.
The MRF9002NR2 is designed to operate in the 9.0GHz to 2.1GHz range, making it ideal for the broad spectrum of today\'s high-frequency applications. It is capable of providing an output power of up to 22dBm and a gain of up to 20dB, making it suitable for both long-distance and short-distance transmission. It also has an extended temperature range of -40°C to 105°C, providing stable performance throughout its operating range.
One of the most important features of the MRF9002NR2 is its high linearity. Linearity is crucial for proper amplification, and the MRF9002NR2 is designed to deliver up to 30dB of intermodulation distortion (IMD) across its operating range. This ensures that transmitted signals are amplified with minimal distortion and helps reduce interference. Its low input and output noise figures of less than 2dB, along with its low power consumption and high reverse isolation, make the MRF9002NR2 an ideal choice for RF applications.
In addition to its high linearity, the MRF9002NR2 has excellent gain and noise figures across its operating frequency range. This makes it well suited for applications such as radio transmitters, radio receivers, and related equipment. It is also well suited for use in wireless networks, avionics systems and other mission critical applications. Its rugged design and wide operating temperature range makes the MRF9002NR2 an ideal choice for a variety of applications.
The MRF9002NR2 is a very versatile and well-rounded device that can be used in a variety of RF applications. With its wide operating range, high linearity, low noise figures and high gain, it is a top choice for a variety of RF applications. Its rugged design and extended temperature range make it suitable for use in mission critical and high-performance applications, such as avionics, telecommunications and more.
The specific data is subject to PDF, and the above content is for reference
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