MRF9045LSR5

MRF9045LSR5 is a later generation of high performance Lateral N-channel RF (Radio Frequency) Power MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) part of a family of high power MOSFETs developed for use in a wide variety of Radio Frequency power amplifier applications. It is designed to meet the demands of very high power amplifier applications from HF to the VHF band and above, with an IRLM (Input Reflected Load Modulation) capability to 150W for frequencies up to 600 MHz. The MRF9045LSR5 is the ideal device for balanced amplifiers, broadband amplifiers, wideband amplifiers and linear amplifiers, as well as Digital TV headend and amplifier designs.

In terms of its structure, the MRF9045LSR5 is a lateral N-channel RF power MOSFET fabricated on a thermally superior gallium nitride (GaN) substrate, allowing the device to deliver higher power density, improved ruggedness and higher power efficiency. The device is housed in a package with a low parasitic metal construction that significantly reduces its size and enhances thermal dissipation. The advantages of the MRF9045LSR5’s design and construction include improved thermal behavior and high reliability, allowing it to provide superior performance and higher power over a wide range of frequencies.

MRF9045LSR5’s operation is based on the principles of heterojunction bipolar transistor (HBT) and MOSFET technology. The device uses an N-channel MOSFET as the input transistor and a P-channel MOSFET as the output transistor. Together, these two types of transistors form a balanced amplifier that has been able to provide superior high frequency performance when compared to traditional amplitude modulated (AM) amplifiers. The MOSFET technology used in the MRF9045LSR5 also allows it to deliver superior power efficiency, meaning that the amplifier can deliver higher power within a given supply voltage range.

The MRF9045LSR5 is also equipped with an IRLM (Input Reflected Load Modulation) capability, allowing the device to deliver higher power density and improved ruggedness. This allows the MRF9045LSR5 to provide excellent linearity and high power efficiency over a wide frequency range. Furthermore, the improved power density, coupled with its high gain linearity, allows the device to maintain superior performance even at higher frequencies. Additionally, the device also features a low input noise, providing superior signal to noise ratio.

Overall, the MRF9045LSR5 is an ideal device for use in a wide range of applications where high power, wide frequency range and superior performance are desired. The combination of its superior construction, IRLM capability, wide frequency range and improved power density makes the MRF9045LSR5 the ideal choice for a variety of amplifier applications, from HF to the VHF band and above. Furthermore, its low input noise and superior linearity provide superior signal to noise ratio, making it an ideal device for Digital TV headend and amplifier designs.