Allicdata Part #: | MRF9060LSR1-ND |
Manufacturer Part#: |
MRF9060LSR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 945MHZ NI-360S |
More Detail: | RF Mosfet LDMOS 26V 450mA 945MHz 17dB 60W NI-360 S... |
DataSheet: | MRF9060LSR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 945MHz |
Gain: | 17dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | NI-360S |
Supplier Device Package: | NI-360 Short Lead |
Base Part Number: | MRF9060 |
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The MRF9060LSR1 is designed as an exceptionally efficient power amplifier transistor in the 900 MHz ISM band. It contains two discrete laterally diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs), a 1 Watt power amplifier and a digital predistorter. This device is ideal for applications that require high-efficiency and high output power, such as cordless phones, wireless networks and other wireless systems.
The MRF9060LSR1 is suitable for use in IEEE 802.11a standards applications and supports multiple-input multiple-output (MIMO) technology. It is capable of providing up to 17dB of gain and a maximum RF output power of 23dBm. This device also offers excellent linearity, allowing for maximum data throughput under difficult conditions.
This device uses an LDMOSFET process to achieve superior linearity, efficiency, power and harmonic rejection, as well as superior breakdown voltage. The device has an amplifier gain of 1.1dB at 1GHz and a drain efficiency of 60%. It is designed for use in applications such as cordless phones, wireless networks, 802.11a WLANs, 802.11b PoE, and 802.11n A-MPDU.
The MRF9060LSR1 operates by using junction field effect transistors (JFETs) at the input stage, to enable accurate current flow. These transistors are used to produce a local oscillator (LO), which is used to amplify and then produce the final transmitted signal, including the modulation scheme. The modulation scheme includes the basic channel bandwidth, symbol rate and data rate. The device can be used to amplify signals with a bandwidth of 5-200MHz and a data rate up to 100Mbps.
To ensure proper and efficient operation, the LDMOSFETs must be properly tuned. To do this, the device requires two bias voltages and two supply currents with precise current matching. This is done to ensure the most accurate representation of the signal. Once the device is properly tuned, it can achieve excellent linearity and power, with minimal power consumption.
In addition to providing excellent linearity, power, and efficiency, the MRF9060LSR1 also provides superior harmonic rejection. This is accomplished by the use of a harmonic-reject circuit that is designed to reject harmonics that may be present in the signal. This ensures that the output power is optimized for any given transmission frequency.
The MRF9060LSR1 is suitable for use in a wide range of wireless applications including cordless phones, wireless networks, 802.11a WLANs, 802.11b PoE, and 802.11n A-MPDU. It is also suitable for applications requiring high-efficiency, high output power, and superior linearity, power, and harmonic rejection. The device is highly reliable and provides excellent performance.
The specific data is subject to PDF, and the above content is for reference
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