Allicdata Part #: | MRF9080LR5-ND |
Manufacturer Part#: |
MRF9080LR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 960MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 26V 600mA 960MHz 18.5dB 70W NI-780 |
DataSheet: | MRF9080LR5 Datasheet/PDF |
Quantity: | 214 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 600mA |
Power - Output: | 70W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
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MRF9080LR5 is a type of Field Effect Transistor (FET). It is part of Microwave RF (Radio Frequency) product line manufactured by Motorola. More specifically, it belongs to the category of high power MOSFETs. This type of FET is a switched-mode amplifier, and its primary application is for use in high power communications systems.
A FET works by means of a principle called the “field-effect”. A FET consists of a source, drain and gate terminals. The source and drain are the input and output terminals of the FET, and the gate terminal is the control terminal. When a voltage is applied to the gate terminal, the electrons move from the source to the drain, causing a current flow through the FET. This current can be controlled by adjusting the voltage applied to the gate terminal. This current control is the basis on which the MRF908LR5 operates.
The MRF9080LR5 is composed of a N-channel MOSFET that is specifically designed for operation at very high frequencies in the range of 1-2 GHz. It is well-suited for use in the Bluetooth and WLAN application, where low power consumption and high efficiency are necessary. The FET is special because it has a low channel-to-gate capacitance, which makes it suitable for use in high-frequency applications. Furthermore, the FET’s high-power capability and low on-resistance make it an ideal choice for operation in Class-C and Class-D amplifiers. Additionally, the FET has very fast switching speeds, which maximize the amplifiers’ overall performance.
The MRF9080LR5 can be used in applications such as mobile communications systems, base station radios, repeater radios, and broadcast radios. It can also be used in consumer electronics such as TV receivers, cordless phones, satellite receivers, and car radios. It is also used in microwave-link radios and antenna systems. These various applications demonstrate the wide use of the device and its capability to perform in a variety of communication systems.
Overall, the MRF9080LR5 is an excellent example of a high power MOSFET for use in today’s high power communications systems. Its high-speed switching makes this FET suitable for use in Class-C and Class-D amplifiers. Its low channel-to-gate capacitance makes it suitable for use in high-frequency applications as well. It has a wide range of uses including mobile communications systems, base station radios, repeaters, consumer electronics and microwave-link radios. In conclusion, the MRF9080LR5 is an ideal choice for the modern communication system.
The specific data is subject to PDF, and the above content is for reference
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