MRF9030NR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF9030NR1 is a RF power MOSFET transistor. It uses a N-channel MOSFET for the RF power amplification in various applications like military, aerospace, cellular, industrial and commercial communication systems. It operates at various frequencies, ranging from 3.3-3.6 GHz, while offering an output power of up to 120W. The MRF9030NR1 has a high linearity and high efficiency, which makes it suitable for high-power systems.

The MRF9030NR1 is an ideal choice for high power linear and saturated applications, thanks to its low source-drain parasitics and excellent device consistency. It is housed in a surface mount package and has a low gate-source capacitance and low forward gate resistance.

Application Field

The MRF9030NR1 is used in many RF power amplifying and switching applications, as it can provide significant power output. It is ideal for use in cellular base stations, military and space communications, RF identification systems, hardware modems, and other high power devices. In addition, its current rating is sufficient for devices such as cell phones, satellite communication systems, and Ethernet links.

Working Principle

The working principle of the MRF9030NR1 is similar to that of other MOSFETs. It uses an N-channel MOSFET with source-drain connection in order to control the drain current. This current flow is regulated by the gate voltage. When a positive voltage is applied to the gate, it attracts the electrons in the source and the drain, allowing current to flow. Thus, the MRF9030NR1 is able to act as an amplifier or a switch.

The MRF9030NR1 also features a high breakdown voltage, which is essential for RF applications. This allows a high voltage to be applied so that more power can be delivered to the output devices. Additionally, the transistor has a low loss factor and a good power-handling capability.

The MRF9030NR1 is a reliable and versatile RF power transistor, and is widely used in modern RF applications. Its low source-drain parasitics, low gate-source capacitance, and low forward gate resistance ensure superior performance in a wide range of operating conditions. The high linearity and high reliability of the transistor make it an excellent choice for high-power systems.

The specific data is subject to PDF, and the above content is for reference