Allicdata Part #: | MRF9210R5-ND |
Manufacturer Part#: |
MRF9210R5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 880MHZ 860C3 |
More Detail: | RF Mosfet LDMOS 26V 1.9A 880MHz 16.5dB 40W NI-860C... |
DataSheet: | MRF9210R5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 16.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.9A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | NI-860C3 |
Supplier Device Package: | NI-860C3 |
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MRF9210R5 is an advanced semiconductor device, belonging to Field Effect Transistor, specifically, metal oxide semiconductor field effect transistor (MOSFET). It is configured and designed specially for high-frequency, high-efficiency and high-power applications, making it ideal for use in the radio frequency (RF) area.
This semiconductor is designed with a special architecture, which means multiple elements are incorporated onto one chip. It consists of a drain, gate and source. The gate is the control element, while the drain and source are the two outputs. The electrical field created between the drain and the source regulates the flow of electrons and the resistance between the two parts.
The MRF9210R5 is able to operate in either an "on" or "off" state. When in an "off" state, electrons cannot travel between the drain and source due to the high electrical field, thus blocking current from flowing. When in an "on" state, the electric field is lowered, allowing electrons to move freely from the drain to the source, allowing current to flow.
The MRF9210R5 also has a very high linearity when operating in an "on" state. This makes it suitable for use in applications where high accuracy is required, such as in radio communications systems. The device is also low power, with the total gate input power only needing to be a few milliwatts.
The MRF9210R5 is mainly used to construct a two-way radio communication system. In this system, radio waves are transmitted from a base station to a mobile station. The MRF9210R5 is used to amplify the weak signals sent by the mobile station and boost them to a stronger level to be sent to the base station. At the base station, the MRF9210R5 is used to reduce the strength of the signals received from the mobile station before passing them to the receiving apparatus.
The MRF9210R5 can be used in many other applications as well. It can be used in audio amplifiers, FM receivers, communications receivers, and cellular radio receivers. It can also be used in industrial controls such as those used in robots and factory automation.
In summary, the MRF9210R5 is an advanced semiconductor device, ideal for use in high-frequency, high-efficiency and high-power applications. It is composed of a drain, gate and source, with the gate being the control element and the drain and source being the two outputs. It is mainly used to construct two-way radio communication systems and can also be used in audio amplifiers, FM receivers, communications receivers, cellular radio receivers and industrial controls.
The specific data is subject to PDF, and the above content is for reference
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