MRF9135LR5

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MRF9135LR5 is an advanced RF power amplifier introduced by the well-known company Motorola. It is a common source medium to high power amplifier for both cellular and PCS1800/1900/2.5G applications. MRF9135LR5 is manufactured using advanced PHEMOS technology which provides low distortion in linear amplification and high efficiency in saturated amplification. It is available in surface mount package, making it ideal for wireless applications such as base transceiver for wireless phone.

MRF9135LR5 classification is a field effect transistor (FET), metal-oxide semiconductor field effect transistor (MOSFET) and radio-frequency (RF) field effect transistor (FET). FETs are active devices that use a voltage difference between source and drain terminals to control the current flowing across the channel. MOSFETs are a subclass of FETs with metal-oxide-semiconductor gate. RF FETs are often used in amplifying signals in the high frequency range (10kHz to 300GHz). The applications of RF FETs include RF amplifiers, RF power detectors and RF power amplifiers.

The working principle of MRF9135LR5 is based on FETs of metal oxide semiconductor structure. The basic structure of the device is composed of three regions, which are source, drain, and gate terminals. The gate terminal is situated between the source and the drain terminal, and the metal-oxide-semiconductor interface acts as an insulator. When a small voltage is applied to the gate pin, a voltage difference is created between the source and the drain regions, which allows a controlled current to flow across the channel. This current is then used to amplify the signal present in the RF range.

MRF9135LR5 is generally used in wireless applications like base transceiver systems. It is also used in fixed Wireless Local Loop (WLL) implementations. It provides low noise and high power gain, can coexist with other transmitters, and operates over various air interface standards. Additionally, it features low harmonic and spurious noise levels and has integrated temperature compensations. Other applications of MRF9135LR5 include Common Carrier Wireless LANs, Power Amplifier (PA) Driver in Cellular Base Stations and PCS1900 Multi-Carrier systems.

In summary, MRF9135LR5 is a field effect transistor (FET) of metal oxide semiconductor (MOSFET) structure which falls in the radio frequency (RF) category. The working principle of MRF9135LR5 is based on FETs of metal oxide semiconductor structure in which a small voltage applied to the gate pin creates a voltage difference between the source and drain regions, and the current flowing across the channel is used to amplify signals in the RF range. It is widely used in wireless applications such as base transceiver systems, Fixed Wireless Local Loop (WLL), and Common Carrier Wireless LANs.

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