MRF9135LR3

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MRF9135LR3 Application Field and Working Principle

MRF9135LR3 is a high-power, GaN-based RF transistor developed by Motorola. It is designed for use in most common RF applications, including 2G/3G/4G base station systems, and it can operate in both linear and switch modes. This transistor has a drain-source voltage of 28v and a drain-source current of 150a. It can support up to 1200MHz frequency and power levels of up to 600 watts.

The MRF9135LR3 transistor is an enhancement-mode device, meaning that it requires an appropriate gate voltage to turn the transistor on. The gate-source voltage is typically 0.6 to 2.5V, and the voltage at the drain should be greater than the source in order to turn on the transistor. If the voltage differential between the drain and source is too low, the transistor will not work.

Once the transistor is turned on, the current flows from source to drain and the drain-source resistance (Rds) decreases. The resistor value for an enhancement-mode transistor is usually relatively low, and can be as low as 0.2 Ohms for RF transistors. The gain of the MRF9135LR3 is typically between 11 to 14 dB.

The MRF9135LR3 is commonly used in RF applications such as power amplifiers, switch mode power supplies and RF switches. One of the major advantages of using RF transistors is that they are able to switch large amounts of power with relatively low losses. They are also well-suited for use in high frequency applications, such as in W-CDMA and LTE base station systems. Additionally, the MRF9135LR3 is one of the few transistors that can be used in both linear and switch modes.

In summary, the MRF9135LR3 is a high-power RF transistor that can be used in a variety of RF applications, from power amplifiers to base station systems. It has a wide operating voltage range, low losses, and excellent gain. It is well-suited for use in both linear and switch mode applications, making it a versatile and reliable transistor for RF applications.

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