Allicdata Part #: | MRF9085LSR3-ND |
Manufacturer Part#: |
MRF9085LSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 880MHZ NI-780S |
More Detail: | RF Mosfet LDMOS 26V 700mA 880MHz 17.9dB 90W NI-780... |
DataSheet: | MRF9085LSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 17.9dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 700mA |
Power - Output: | 90W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF9085 |
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The MRF9085LSR3 is a high-performance RF transistor available for broadcast and consumer applications where wide bandwidths and high gain are required. It is a later generation of devices from the same family and provides a significant improvement in performance over its predecessor. The device features high frequency, high power and wide bandwidths, making it suitable for a variety of applications.
The MRF9085LSR3 is widely used in broadcast and consumer electronics and is a high-performance solution for RF signals in a variety of frequencies. It is a package of a radial-gold-fused-diodal device, commonly known as an L-type diode. The L-type diode can be used to provide fast recovery, high current, and low resistance in the active region of the device, making it an ideal choice for RF applications.
The MRF9085LSR3 is an enhancement-mode field effect transistor (FET) and is composed of two MOSFETs, or metal–oxide–semiconductor field effect transistors. The first is an N-channel FET and the other is a P-channel FET. The N-channel FET has a source connected to ground and the P-channel FET has a source connected to the VDD supply voltage. To turn on the device, the gate of the N-channel FET must be driven positive with respect to the source, and the gate of the P-channel FET must be driven negative with respect to the source.
The MRF9085LSR3 is designed to operate in the frequency range of DC up to 1GHz. It has a typical noise figure of 0.8dB and can be used in both linear and non-linear applications. It has a maximum gain of 19.7dB at 1GHz. Its low noise figure and high gain make it suitable for operations in both analog and digital applications. It is also capable of providing wide bandwidths, up to 600 MHz.
The MRF9085LSR3 is a fantastic choice for applications that require wide bandwidths, high frequency response and high power handling. It can be used in broadcast and consumer electronics applications such as television, radio and satellite receivers, telemetry receivers and transmitters, and cellular base stations. It can also be used to provide efficient filters in active antennas, provide gain blocks in power amplifiers, and give noise reduction in amplifier stages.
The MRF9085LSR3 is the perfect choice for a wide variety of RF applications and is a reliable and cost-effective solution. Its high performance and reliability make it an ideal solution for most broadcast and consumer electronic applications.
The specific data is subject to PDF, and the above content is for reference
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