Allicdata Part #: | MRF9045NBR1-ND |
Manufacturer Part#: |
MRF9045NBR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 945MHZ TO272-2 |
More Detail: | RF Mosfet LDMOS 28V 350mA 945MHz 19dB 45W TO-272-2 |
DataSheet: | MRF9045NBR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 945MHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 45W |
Voltage - Rated: | 65V |
Package / Case: | TO-272-2 |
Supplier Device Package: | TO-272-2 |
Base Part Number: | MRF9045 |
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MRF9045NBR1 is an N-channel high power field effect transistor (FET) designed for L-band, S-band and C-band operation in various Wireless Communications applications such as base station and repeater amplifiers, microwave radio link amplifiers, and transceivers.
The MRF9045NBR1 is a new generation LDMOS FET that utilizes the advanced and proven technology of microelectronics to deliver unparalleled performance and reliability. This device is a high-power, high-reliability GaAs MESFET, suitable for L-band, S-band and C-band operations. The MRF9045NBR1 is manufactured on the environmentally-friendly GaAs process, with its wafer-bonding technology.
The device can be used for various applications such as base station and repeater amplifiers, tunables, high power, low noise amplifier as well as high power and low noise radio link amplifiers and transceivers. In addition, the MRF9045NBR1 is also suitable for high power amplifiers, high power low distortion oscillators and wideband amplifiers in microwave and radio frequency.
The MRF9045NBR1 is designed for operation at frequencies between 0.5 GHz and 4 GHz. The RF output power of the device is adjustable over a wide range, up to a maximum of 40W. The device has a gain of 17 dB at maximum RF output power and a maximum power-added efficiency of 44%.
The MRF9045NBR1 operates in class AB as an amplifier or class B as an oscillator. Due to the exceptional power efficiency, this device has an excellent noise figure (NF) of less than 2 dB and an excellent P1dB of 40 Watt between 0 and 4 GHz.
The device is equipped with an output power-limiting detector, which limits the maximum output power according to the limit set by the power level selector. The output power level can be easily adjusted by controlling the internal power level selector.
The MRF9045NBR1 also features a built-in temperature sensor which allows for accurate temperature protection and over-temperature protection of the device. This sensor helps protect the device from thermal overload and enhances its reliability.
The MRF9045NBR1 can be used in many different applications and is highly suitable for any high-power, high-reliability applications. Its advanced manufacturing process and innovative design make it a perfect device for wireless communication systems.
The specific data is subject to PDF, and the above content is for reference
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