Allicdata Part #: | MRF9060LR5-ND |
Manufacturer Part#: |
MRF9060LR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 945MHZ NI-360 |
More Detail: | RF Mosfet LDMOS 26V 450mA 945MHz 17dB 60W NI-360 S... |
DataSheet: | MRF9060LR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 945MHz |
Gain: | 17dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | NI-360 |
Supplier Device Package: | NI-360 Short Lead |
Base Part Number: | MRF9060 |
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The MRF9060LR5 is a common transmitter circuit used in radio frequency communication systems. It is a discrete, dual transistor Linear RF power amplifier that allows radio systems to incorporate a higher power level than what is achievable in monolithic systems. The MRF9060LR5 allows a user to boost their signal power and reach greater distances and extend battery life. With this circuit, it is possible to design and build a wide range of applications and devices that take advantage of radio frequency communications.
The MRF9060LR5 leverages the capabilities of two different types of transistors, the Bipolar Transistor and the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Bipolar Transistor is predominantly used to deliver base current to the MOSFET, which then amplifies this current to a higher level. This allows for a higher power efficiency in terms of the ratio of input to output power.
The MRF9060LR5 leverages the dual transistor design in a number of ways. Firstly, it allows for a lower impedance for the power level output and therefore reduces distortion. Additionally, the two transistors provide protection against high-level input and output voltage spikes that could potentially damage the device. Therefore, even when operating the device in high power environment, the user can ensure there is no damage occurring due to voltage spikes.
The MRF9060LR5 also provides a number of other features. It includes a built-in RF switch which can facilitate switching between transmitter and receiver modes. Additionally, as the transistor elements are fairly small and lightweight, the device can be made much smaller and can be fitted into a variety of applications.
The MRF9060LR5 is an ideal circuit for a wide range of applications. It is suitable for short and long range radio frequency transmission, and its small size enables it to be used in many different types of devices. The dual transistors provide a higher power efficiency and reduce distortion in the power level output, making it well suited for applications such as mobile phones, wireless networks, satellite communications and radar systems.
The device is suitable for a wide range of frequencies, with models covering from 0.75 MHz to 300 MHz. This makes it ideal for both low power applications such as walkie-talkie radios and high power applications such as cellular base stations and aerospace communication systems.
In summation, the MRF9060LR5 is a versatile and reliable RF power amplifier, suitable for a wide range of applications and devices. Its dual transistors provide high power efficiency, reduce distortion and provide protection against voltage spikes. Furthermore, its small size and wide range of operating frequencies make it ideal for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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