MRF9135LSR5

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MRF9135LSR5 is a common field-effect transistor (FET) specifically used in high-frequency radio frequency (RF) applications. It is a later generation of the Motorola Semiconductor LSR series of FETs and is designed to provide low noise and excellent linearity. The RF field-effect transistor can also be referred to as a MOSFET, or metal oxide semiconductor field effect transistor, depending on the context. RF FETs are commonly used for amplifying signals for digital communication systems, switching applications, and for providing gain and control for other RF applications.

The MRF9135LSR5 is a later generation FET from the Motorola LSR series of field-effect transistors. It is a high-performance device, designed for a number of applications involving high-power radio frequency signal amplification. It has a lower noise figure than many earlier-generation devices, making it particularly well-suited for applications requiring frequency-agile and wide-bandwidth communications. The transistor is also more linear than many of its predecessors, allowing for closer control of output. This is especially important in linear amplification applications, where distortion must be carefully managed.

The MRF9135LSR5 is a single-gate device in which the gate capacitance is formed between the gate electrode and the substrate body. The device is fabricated by sandwiching three semiconductor layers between two transparent conductive layers, typically aluminum. A gate voltage is applied to the gate contact of the device and an operating frequency is then applied to the gate electrode, causing an electric field to form between the gate and the body. The electric field causes the FET to change its impedance or resistance properties, and to produce a signal in response to an applied input.

When this signal is amplified and passed to the output, it is commonly referred to as a transconductance. The transconductance is the ratio of the output to the input voltage, and it indicates how much gain or improvement the device makes to the signal. In addition to the gate-body capacitance, the MRF9135LSR5 is also characterized by a maximum gate voltage, drain-source voltage, drain-gate voltage, on-resistance and reverse transfer capacitance.

The transistor also has an extremely low capacitance-to-gate voltage ratio, allowing it to be used in noise-sensitive applications such as low-noise amplifiers. This transistor is well-suited for a variety of applications including switching, high-power amplifying, low-noise-amplifying, and gain control. It has the ability to provide efficient, low noise, and linear current and voltage control with wide-bandwidth signal processing capabilities.

The MRF9135LSR5\'s high frequency performance makes it ideal for a variety of sophisticated and demanding signal interference applications. It is ideal for use as a digital or switching signal amplifier, a linear amplifier, or as a gain control device in any application requiring an efficient, low noise, and linear current and voltage control. In addition to reducing noise, this device also has the capability to handle extreme temperature ranges, making it well-suited for high-reliability systems. Finally, this device is also highly efficient, allowing it to meet the stringent requirements of modern RF systems.

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