MRF9080LR3 Allicdata Electronics
Allicdata Part #:

MRF9080LR3-ND

Manufacturer Part#:

MRF9080LR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 960MHZ NI-780
More Detail: RF Mosfet LDMOS 26V 600mA 960MHz 18.5dB 70W NI-780
DataSheet: MRF9080LR3 datasheetMRF9080LR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 960MHz
Gain: 18.5dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 600mA
Power - Output: 70W
Voltage - Rated: 65V
Package / Case: NI-780
Supplier Device Package: NI-780
Description

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The MRF9080LR3 may be classified as a later generation of RF power transistors developed and manufactured by Freescale Semiconductor, Inc. that use a silicon-based multi-layer metal–oxide–semiconductor field-effect transistor (MOSFET) technology.

The MRF9080LR3 uses MOSFET technology that is designed to facilitate RF power amplification in a wide range of radio frequency (RF) applications. This technology is capable of providing operators with higher power conversion efficiency, better gain, and integration capabilities that enable significant system-level cost savings and reduced size. In addition, the MRF9080LR3 is capable of providing excellent impedance matching, linearity, and low-noise and distortion performance.

MRF9080LR3 finds application in frequency bands ranging from 18-960 MHz. Therefore, this device can be used in various types of RF and microwave systems such as base stations, remote radiotelephony (RTR), satellite-based communications, and amateur radio systems. The output range of the MRF9080LR3 is from 18 to 960 MHz with a power output of up to 10 watts.

The working principle of the MRF9080LR3 is based on the MOSFET technology that is capable of providing superior performance in terms of frequency, power, and system reliability under extreme environmental conditions. This transistor can be used in both linear and logic circuits. In linear circuits, the power output from the transistor is determined by the amount of current that flows through the drain-effect transistor (FET). In logical circuits, the transistor acts as an on/off switch that is capable of quickly switching between two different states.

When compared to other types of transistors, the MRF9080LR3 offers improved performance, robustness, and high integration capabilities. This transistor can be used in various types of RF power amplification applications. Moreover, this device is highly reliable since it is operable under extreme environmental conditions. In addition, the MRF9080LR3 is capable of providing excellent voltage, current, and power handling capabilities.

The MRF9080LR3 is a highly versatile and cost-effective solution for RF power amplification applications, providing superior performance and robustness. This device is capable of providing superior gain, power conversion efficiency, impedance matching, linearity, and low noise and distortion. Additionally, the MRF9080LR3 is capable of operating in both linear and logic circuits and is suitable for a wide range of RF and microwave system applications.

The specific data is subject to PDF, and the above content is for reference

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