Allicdata Part #: | MRF9080LR3-ND |
Manufacturer Part#: |
MRF9080LR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 960MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 26V 600mA 960MHz 18.5dB 70W NI-780 |
DataSheet: | MRF9080LR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 600mA |
Power - Output: | 70W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF9080LR3 may be classified as a later generation of RF power transistors developed and manufactured by Freescale Semiconductor, Inc. that use a silicon-based multi-layer metal–oxide–semiconductor field-effect transistor (MOSFET) technology.
The MRF9080LR3 uses MOSFET technology that is designed to facilitate RF power amplification in a wide range of radio frequency (RF) applications. This technology is capable of providing operators with higher power conversion efficiency, better gain, and integration capabilities that enable significant system-level cost savings and reduced size. In addition, the MRF9080LR3 is capable of providing excellent impedance matching, linearity, and low-noise and distortion performance.
MRF9080LR3 finds application in frequency bands ranging from 18-960 MHz. Therefore, this device can be used in various types of RF and microwave systems such as base stations, remote radiotelephony (RTR), satellite-based communications, and amateur radio systems. The output range of the MRF9080LR3 is from 18 to 960 MHz with a power output of up to 10 watts.
The working principle of the MRF9080LR3 is based on the MOSFET technology that is capable of providing superior performance in terms of frequency, power, and system reliability under extreme environmental conditions. This transistor can be used in both linear and logic circuits. In linear circuits, the power output from the transistor is determined by the amount of current that flows through the drain-effect transistor (FET). In logical circuits, the transistor acts as an on/off switch that is capable of quickly switching between two different states.
When compared to other types of transistors, the MRF9080LR3 offers improved performance, robustness, and high integration capabilities. This transistor can be used in various types of RF power amplification applications. Moreover, this device is highly reliable since it is operable under extreme environmental conditions. In addition, the MRF9080LR3 is capable of providing excellent voltage, current, and power handling capabilities.
The MRF9080LR3 is a highly versatile and cost-effective solution for RF power amplification applications, providing superior performance and robustness. This device is capable of providing superior gain, power conversion efficiency, impedance matching, linearity, and low noise and distortion. Additionally, the MRF9080LR3 is capable of operating in both linear and logic circuits and is suitable for a wide range of RF and microwave system applications.
The specific data is subject to PDF, and the above content is for reference
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