MRF9045NR1

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MRF9045NR1 is a high performance, monolithic N-Channel enhancement mode metal oxide semiconductor field effect transistor (MOSFET) specifically designed as a saturated switch for use in wideband pulsed power applications up to 10 GHz. MRF9045NR1 is provided in the 8 lead Dual In-line Plastic Package (DIP) and is ideally suited for commercial and industrial applications requiting wide bandwidth, high input impedance, and high current capability.

Application Field

MRF9045NR1 is suitable for a wide range of industrial, commercial and military applications. This MOSFET is ideal for use in a variety of communications systems, such as base station amplifiers, transmitters, antennas, WiFi and WiMAX systems, Bluetooth devices, ADSL modems, optical receivers, and microwave systems.

MRF9045NR1 is also well suited for power management and amplification applications in the automotive and home appliance markets. Its design facilitates use in the switching power supply, motor control, induction heating and other power application systems. Furthermore, because of its excellent RF performance, this MOSFET is ideal for power switching control in transmitters used in radar systems and communication jamming devices.

Working Principle

The MRF9045NR1 is an N-Channel enhancement mode MOSFET. Its linear this principle is similar to other MOSFETs with four distinct regions. Depending on the bias current, an electric field is created between the source and the drain. This electric field can be used to conduct or block electrons from passing through the transistor. The source and drain are connected to the gate with a metallic gate oxide layer. When a positive bias is applied to the gate, an electric field is formed between the source and the gate, attracting electrons from the source towards the gate and allowing them to flow through the transistor.

When the bias is on and a signal is applied, the electric field created between the source and the gate keeps the current flowing and a small voltage can be applied to the gate to turn off the transistor. The gate oxide layer also eliminates the need for a bulky power supply, along with its current and voltage handling requirements, simplifying the transistor design.

The MRF9045NR1 has two distinct performance characteristics: high gain and low noise. This distinct performance makes them ideal for a variety of applications requiring excellent RF performance. With its wide bandwidth and linearity, it can be used in applications where gain and linearity are important.

The MRF9045NR1 is designed for optimum performance in a wide range of high frequency applications, making it one of the leading FET’s in the industry. Its compact size, low noise and high transient capability makes it the ideal choice for applications requiring excellent RF performance.

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