MRF9085LR3

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The MRF9085LR3 is a matched pair, high power, discrete GaN HEMT device that can deliver up to 12 Watts of 1 dB gain, while providing low distortion characteristics. It is a capable of operating in the frequency range of 0.40 GHz to 3.0 GHz and is specifically designed for use in broadband and multi-star applications.

The MRF9085LR3 can be used in amplifier, oscillator, and mixer circuit configurations, as well as in waveguide structures. It is suitable for point-to-point and multipoint radio systems such as WLAN, VSAT, and repeaters, where linearity and high gain are important in a temperature range from -40 to +85 degrees Celsius.

Data transmitted through the device is amplified and retransmitted in digital form and can be either continuous wave (CW) or pulsed wave (PKW). The MRF9085LR3 is designed for digital modulation as well as analog modulation, which allows for efficient transmission over channelized and discretized communications networks.

The MRF9085LR3 is an enhancement-mode field effect transistor (FET) and operates by applying a voltage to the gate, which creates an electric field that attracts electrons from the source, creating a channel between the drain and source, allowing current to flow. The voltage applied to the gate controls the current flow.

The transistor includes an integrated bypass capacitor to improve the input and output impedance and reduce overshoot and ringing when switching. This device is fabricated using GaN HEMT. GaN has unique properties that make it advantageous over other materials when it comes to frequency, gain, output power, and power dissipation. GaN HEMTs have the capability of providing frequencies up to 40 GHz, using higher frequency and higher linearity designs.

The MRF9085LR3 is designed to operate as a common gate amplifier, which provides high voltage gains, linearity, and input/output match. It is a robust, high efficiency device with a high thermal limit and low noise figure. The device is also equipped with an integrated gate drill that ensures gate voltage threshold accuracy from device to device.

In addition, the MRF9085LR3 utilizes a high temperature flip-chip gold capacitor, which eliminates the need for a pick-and-place operation, eliminates the need for a solder mask for attachment, and ensures a continuous electrical contact. This design also helps to reduce cost and improve reliability.

The MRF9085LR3 is a high power, discrete GaN HEMT device that provides low distortion, high gain, and low noise figure. It can be used in amplifier, oscillator, and mixer circuit applications in point-to-point and multipoint radio systems, such as WLAN, VSAT, and repeaters. It is fabricated using GaN HEMT and is designed with an integrated bypass capacitor, high temperature flip-chip gold capacitor, and integrated gate drill for maximum performance and reliability.

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