Allicdata Part #: | MRF9120LR3-ND |
Manufacturer Part#: |
MRF9120LR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 880MHZ NI-860 |
More Detail: | RF Mosfet LDMOS 26V 1A 880MHz 16.5dB 120W NI-860 |
DataSheet: | MRF9120LR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 16.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1A |
Power - Output: | 120W |
Voltage - Rated: | 65V |
Package / Case: | NI-860 |
Supplier Device Package: | NI-860 |
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The MRF9120LR3 is a unique type of transistor. It is a field-effect transistor (FET), a type of transistor commonly used for radio frequency (RF) applications. It has both an active and a passive mode.
In its active mode, the MRF9120LR3 operates as a low-noise amplifier, providing a high level of gain and excellent linearity. This is ideal for wireless devices, such as Wi-Fi routers and cell phones. The transistor also features low power consumption, making it more energy-efficient than many other types of transistors.
The MRF9120LR3’s passive mode allows it to act as a voltage-controlled resistor (VCR). This is useful for controlling the current flowing through the transistor. VCR mode is particularly helpful for controlling the amount of power delivered to a device, such as a radio or a cell phone. This can help conserve energy and regulate the temperature of the device.
In addition to its active and passive modes, the MRF9120LR3 can also be used as an oscillator in order to generate an alternating current used for radio frequency purposes. This helps to provide a clean, uninterrupted signal for radio communications.
Overall, the MRF9120LR3 is a reliable and efficient transistor used in a variety of applications. This includes modulating the amplitude of a radio signal, receiving radio signals, and switching circuits on and off. It is also a popular choice for RF power amplifiers, making it one of the most versatile transistors available.
The specific data is subject to PDF, and the above content is for reference
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