MRF9210R3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF9210R3 is an RF power field-effect transistor (FET) designed for low voltage, low-cost Class C operation in the 900 MHz-1050 MHz frequency band. It is designed for applications in both linear and non-linear operations and can support low to medium power operations. It is especially suitable for applications where low drain-source on resistance (RDS(on)) and low bias current are desired.

The MRF9210R3 provides a robust design with low threshold voltage (VGW) and a high maximum junction temperature of 175ºC, ensuring reliable operation in multiple temperature settings. It offers a low quiescent current and low drain-source on-resistance, providing optimum power savings and efficient performance. The transistor is capable of operating at a frequency up to 2.5 GHz and has a power dissipation rating of 1 watt.

The MRF9210R3 is composed of multiple elements including a gate, source, drain and body. The FET is a 3-terminal device with a gate, source and drain. The gate is the control element and is the primary factor in modulating voltage and current flow. The source and drain are the two current-carrying terminals, where electrons flow in and out of the device when the gate is actuated. The gate voltage, which is the voltage between gate and source, determines how much current can pass through the FET, making it an ideal device for switching and amplification, as well as voltage and current regulation.

The MRF9210R3 features a low threshold voltage of 0.59 V, which ensures reliable operation and efficient performance in Class C operation. The temperature coefficient of RDS adjust is 58 mV/K, ensuring reliable operation over a wide temperature range. The low RDS(on) of 10.7 mΩ at 10V and 3A makes the device suitable for applications where low current consumption is desired. Moreover, the high FET power dissipation rating of 1 W enables stable operation in medium power applications.

The MRF9210R3 is built with a power driver compliant with ISO1050 digital interface and is compatible with all MCUs, DSPs and FPGAs. It offers ESD protection of 2000V and latch-up immunity of 250mA, making it suitable for use in a wide range of applications, such as transmitter drivers, amplifier stages and power stages. The device is also compatible with a wide range of package packages, such as leadless, single, dual and quad.

In summary, the MRF9210R3 is an RF power field-effect transistor designed for low voltage, low-cost Class C operation in the 900 MHz - 1050 MHz frequency band. It offers low threshold voltage and a high maximum junction temperature of 175°C, ensuring reliable operation in multiple temperature settings. It features low quiescent current and low drain-source on-resistance. The device is capable of operation at a frequency up to 2.5 GHz and is power rated at 1 W. Its support for digital interface makes the MRF9210R3 applicable for a wide range of applications and package types.

The specific data is subject to PDF, and the above content is for reference