MRF9135LSR3

MRF9135LSR3 is a high performance, surface-mount power transistor designed for use in broadband applications. It offers superior electrical performance across a range of frequencies and power levels. The MRF9135LSR3 is the safest, most compact and efficient choice for modern high-power, high-frequency applications.

An MRF9135LSR3 is a field-effect transistor (FET) specifically designed for RF (radio frequency) applications. It is a general purpose FET, offering low input capacitance and low gate-to-source capacitance. It is optimized for use in broadband RF amplifier circuits, and can be used across a wide range of output power and frequencies.

MRF9135LSR3 is composed of two parts, the gate and the channel. The gate is a layer of metal oxide semiconductor (MOS) material, and the channel is a layer of conductive material, such as aluminum. The gate is connected to a control voltage, typically provided by a power supply, and forms an electrical field. The channel layer is connected to the ground, and forms an opposing electric field. When a charge is applied to the gate, it causes the two electric fields to interact, which modifies the resistance of the channel. The resulting value depends on the charge applied to the gate.

The MRF9135LSR3 has a maximum operating frequency of 3.1 GHz, and can achieve power gains up to 17 dB. It is designed to be a part of broadband amplifiers operating in the HF to UHF range. The device can be used in a wide range of applications due to its low input capacitance and low gate-to-source capacitance. It is also capable of providing up to 50 watts of linear output power.

The MRF9135LSR3 is a cost-effective solution for radio frequency applications. It is a robust, reliable transistor that can offer superior electrical performance across a range of frequencies and power levels. With its compact design and high efficiency, it is the perfect choice for modern high-power, high-frequency applications.