MUN5234DW1T1G Allicdata Electronics
Allicdata Part #:

MUN5234DW1T1G-ND

Manufacturer Part#:

MUN5234DW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5234DW1T1G datasheetMUN5234DW1T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MUN5234DW1T1G is a RF, high performance BiCMOS discrete transistor array. This product was developed for the market for an integrated single sided circuit. The array is constructed in BiCMOS technology combining both bipolar and MOS transistors, giving the capability to provide a wide range of transistor performance with low noise.

The MUN5234DW1T1G has two transistors in a single package and is designed for use in high frequency applications. The product is designed with a pre-biased output circuit which reduces the need for additional components and simplifies the system design. The output voltage range is adjustable and it can be adjusted to match the system requirement.

The MUN5234DW1T1G array is designed to provide high frequency performance by using both bipolar and MOS transistors in a single package. This allows the product to have a wide range of transistor performance with low noise, which makes it suitable for applications such as broadband switching, amplifiers and mixers. The product is also equipped with a pre-biased output circuit which helps in reducing the required number of external components and simplifies the system design.

The application field of the MUN5234DW1T1G is mainly in high frequency applications such as broadband switching, amplifiers, mixers and other RF products. The array is suitable for different kinds of applications because of its low power consumption and integrated single sided design. The product is also designed to have an adjustable voltage range to meet different system requirements.

The working principle of the MUN5234DW1T1G is based on the combination of bipolar and MOS transistors. The product is designed with a pre-biased output circuit, which helps to reduce the need for additional components and simplify the system design. The output voltage range is adjustable and can be adjusted to suit different system requirements. The product also has a low power consumption, which makes it suitable for various applications.

The MUN5234DW1T1G is an innovative product from RF, a high performance BiCMOS discrete transistor array. This product is designed with a pre-biased output circuit, which helps to reduce the need for additional components and simplify the system design. The product does not only have a low power consumption, but also has a wide range of high frequency performance with low noise. In summary, the MUN5234DW1T1G is an excellent high frequency solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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