Allicdata Part #: | MUN5213DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5213DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | MUN5213DW1T1G Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN52**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Bipolar junction transistor (BJT) arrays are a broad category of discrete components that are used in applications such as high-frequency switching, logic gates, amplifiers, and signal conditioning. The MUN5213DW1T1G is a pre-biased array of four NPN bipolar junction transistors (BJTs).
The MUN5213DW1T1G array offers the advantage of having four BJTs in a single package, which reduces the cost and improves the power efficiency of the product. The device has an operating temperature range of -55°C to 125°C, with a collector-emitter breakdown voltage of 45V and a total power dissipation of 0.6W. It also features an on-resistance of less than 1Ω and a turn-on voltage of under 1V.
The working principle of the MUN5213DW1T1G array is based on the principles of BJTs. BJTs work by having a base and two junctions (emitter and collector). By applying a current to the base junction, the current flowing through the other two junctions is controlled. The current through the base junction is proportional to the current flowing through the other two junctions and can be controlled by varying the current to the base, which in turn varies the current through the other two junctions. This principle is used in the MUN5213DW1T1G array to control the current through all four BJTs.
The MUN5213DW1T1G array is used in a wide variety of applications, including power management, signal processing, and motor control. In power management applications, it is used to control the flow of current to the load and reduce power consumption. In signal processing applications, it is used to condition and amplify signals, as well as improve signal-to-noise ratios. Finally, in motor control applications it is used to control the speed and direction of the motor.
The MUN5213DW1T1G array is a cost-effective, power-efficient solution for a variety of applications. Its pre-biased nature allows for easy integration into existing circuits and reduces the need for additional components. Its low on-resistance, wide operating temperature range, and low turn-on voltage make it an excellent choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
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