MUN5212DW1T1G Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Base Part Number:	MUN52**DW1T
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	22 kOhms
Resistor - Base (R1):	22 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MUN5212DW1T1G is an array of eight pre-biased NPN/PNP low Vce(sat) transistors housed in a SOIC8 package. It can reduce power consumption and board space in portable and battery powered systems. This innovative product is suitable for a variety of applications such as Schmitt triggers, LED lighting, switching and amplification.

MUN5212DW1T1G is a pre-biased array, meaning the NPN and PNP transistors are already biased for optimal start-up and turn-off characteristics. The pre-biased NPN/PNP array guarantees extremely low Vce(sat) over temperature extremes and achieves a low saturation voltage of 550 mV at a collector current of 0.5 A.

The working principle of MUN5212DW1T1G is based on the negative feedback of bipolar transistors. It consists of four independent NPN transistor pairs, connected in parallel and emitter coupled. In this configuration, the common emitter node and the NPN side of each pair are pre-biased by an internal resistor. As a result, the voltage across the two transistors is maintained at approximately 0.7 V. This approach ensures equal current sharing between the transistors of each pair, as well as a low collector-emitter saturation voltage.

The main application of MUN5212DW1T1G is in switching and amplification applications where the need for efficient power supply control is critical. It is ideal for replacing discrete transistor based circuits for Schmitt triggers, switches and buffers, as well as for amplifying weak signals. It can also be used in LED lighting applications, where it can regulate the current across a series of LEDs and provide current limiting.

In summary, MUN5212DW1T1G is an array of pre-biased NPN/PNP low Vce(sat) transistors housed in a SOIC8 package. It is suitable for switching and amplification applications and can be easily used to reduce power consumption and board space in portable and battery powered systems. The working principle of MUN5212DW1T1G is based on the negative feedback of bipolar transistors, and its main application is in Schmitt triggers, switches and buffers, LED lighting, and weak signal amplification.

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