Allicdata Part #: | MUN5116DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5116DW1T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5116DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02952 |
6000 +: | $ 0.02567 |
15000 +: | $ 0.02182 |
30000 +: | $ 0.02053 |
75000 +: | $ 0.01925 |
150000 +: | $ 0.01711 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MUN5116DW1T1G is a pre-biased, array transistor designed to provide high gain amplification for signal and communications applications. This device is well suited for Enhanced Differential IR LED ( DIR LED ) communications applications due to its high gain and robust feature set. It has a low-power mode which provides an economical solution for applications where power efficiency is required.
MUN5116DW1T1G is a bipolar junction transistor array, with two NPN transistors integrated onto a single die. It features both common emitter and common collector transistors. It also contains bias diodes which provide pre-bias conditions required by signal and communication applications.
The MUN5116DW1T1G works on the principle of electron movement through the collector-emitter path of each of its transistors. It uses a voltage applied to its base which changes the electrical current flow through the device. Current flow then cascades through the two transistors in the array, allowing for signal amplification. The device also has an open-collector output which allows for increased signal strength provided by the Vce-V Sat ratio.
The MUN5116DW1T1G is suitable for a wide array of applications including cellular handsets, RFID readers, proximity sensing, laser pointers, and other applications. Its low-power mode helps reduce power consumption and cost, making it applicable to applications that require low power. This device is especially useful for DIF LED communication applications, as its high-gain and robust feature set helps achieve desired communication distances.
The MUN5116DW1T1G is a great choice for low-power communication and signal amplification applications. Its low-power mode helps reduce overall power consumption, while its pre-biased transistors, bias diodes, and open-collector output provide the necessary features to overcome distance challenges in communication applications. This versatile device is suitable for a wide variety of applications, making it an ideal choice for an array transistor.
The specific data is subject to PDF, and the above content is for reference
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