MUN5115T1 Allicdata Electronics
Allicdata Part #:

MUN5115T1-ND

Manufacturer Part#:

MUN5115T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 202MW SC70-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: MUN5115T1 datasheetMUN5115T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MUN51**T
Description

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The MUN5115T1 is a precision single pre-biased PNP silicon bipolar junction transistor (BJT) specifically designed for single supply applications and long battery life in portable devices. It provides high gain and low voltage operation, using a single-stage Emitter-Base (E/B) voltage topology that eliminates the need for complex biasing schemes. This article will discuss the application field and working principle of the MUN5115T1.

The MUN5115T1 is designed for applications requiring very low current consumption and wide dynamic range operating points. It delivers excellent linearity, eliminating the need for complex linearization and calibration solutions. This makes the MUN5115T1 ideal for portable applications where simplifying design and reducing component count is critical.

The MUN5115T1 is monolithic, with a pre-biased E/B junction, enabling it to operate from a single 2.5V power supply. It includes all necessary collateral components and bias, allowing it to work within a wide dynamic range without requiring an external bias resistor. This provides for excellent linearity and noise rejection, enabling it to support low power audio and voice applications.

The MUN5115T1 works by exploiting the collector-base junction to control the flow of current between collector and emitter. It uses a single pre-biasing element, which requires only a single supply voltage, to create the needed collector-base voltage. This voltage is used to modulate the current flowing between collector and emitter, creating the desired output. The collector current is varied by the applied base current, so by controlling the base current, the MUN5115T1 can be used to create either digital logic signals or analog signals.

The MUN5115T1 is ideal for audio and voice applications, thanks to its low standby current and single supply operation. The pre-biased E/B junction of the MUN5115T1 provides excellent linearity and low noise, which makes it suitable for use in low power audio and voice applications. The wide dynamic range and low voltage operation make it ideal for applications where long battery life is important.

The MUN5115T1 is a precision single pre-biased PNP silicon bipolar junction transistor that is ideal for single supply applications and long battery life in portable devices. Its single-stage E/B voltage topology eliminates the need for complex biasing schemes, allowing it to achieve excellent linearity and low voltage operation. The wide dynamic range and low power operation make it ideal for audio and voice applications where long battery life is important.

The specific data is subject to PDF, and the above content is for reference

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