MUN5313DW1T1

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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MUN5313DW1T1 application field and working principle

Introduction

The MUN5313DW1T1 is a pre-biased segmented NPN transistor array with PNP common-emitter configuration. It has a low input bias current of 0.3uA and up to 45V of operating voltage. Each segment of the array consists of two transistors and allows for a reliable electrical connection between the two segments. It was designed for use in low power analog, optocoupler and motor driver applications.

Application Fields

The MUN5313DW1T1 has a wide range of applications, from consumer and computer electronics to automotive and industrial. As stated above, this transistor array can be used for low power analog applications, such as the following:

• Analog switches
• Multiplexers
• Operational amplifiers
• Audio amplifiers

Additionally, it can be used in optocoupler and motor driver applications, such as the following:

• DC to DC buck converters
• Electric vehicle motor drivers
• AC and DC motor speed controllers
• Robotics
• Lighting controllers

Working Principle

The MUN5313DW1T1 is a pre-biased segmented NPN transistor array with a PNP common-emitter configuration. This means that the NPN transistors in each segment form a current mirror, and the PNP common-emitter transistor between the two segments acts as the current source. The pre-bias allows each segment to operate independently, and the PNP common-emitter transistor acts as a voltage regulator to keep both segments operating at the same voltage.The current in each segment is determined by the amount of current flowing through the PNP common-emitter transistor. This current is determined by the input voltage and the resistor connected to the base of the PNP transistor. When the input voltage is applied, the base-emitter junction of the PNP transistor becomes forward-biased and the current through the collector-emitter terminals increases. This current is then mirrored by the two NPN transistors in each segment, allowing for a reliable electrical connection between the two segments.The MUN5313DW1T1 is designed for low power analog applications that require a low input bias current. The input bias current of the MUN5313DW1T1 is 0.3uA, which is much lower than other NPN transistor arrays. This low bias current is beneficial in applications where power-savings are important.

Conclusion

The MUN5313DW1T1 is a pre-biased segmented NPN transistor array with PNP common-emitter configuration. It has a low input bias current of 0.3uA and up to 45V of operating voltage, making it suitable for low power analog, optocoupler and motor driver applications. The pre-bias allows each segment to operate independently and the PNP common-emitter transistor acts as a voltage regulator to keep both segments operating at the same voltage. This transistor array is ideal for applications where power-savings are important.

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