MUN5135T1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MUN5135T1 is a transistor specifically designed for audio and video applications that require wide bandwidth and excellent performance. It is a pre-biased, Field Effect Transistor (FET) designed for high-current, high-voltage, and low-impedance applications. It is an ideal device for audio and video designs, DSM and Class D amplifiers, switching power supplies, and other power management applications.

The MUN5135T1 belongs to the Bipolar Junction Transistors (BJT) family, more specifically to the single, pre-biased devices. Bipolar junction transistors are three terminal, solid-state semiconductor devices that composed of semiconductor material. This transistor is pre-biased meaning that its base-emitter junction is reversed biased or forward biased while the base-collector junction is forward biased. This particular device has an emitter-base voltage of 5V and maximum collector current of 5A. It has a low gate threshold voltage ensuring a high output current and power.

The MUN5135T1 offers a high input impedance which is used to protect the device’s gate capacitance from large input currents. It also features a high voltage breakdown rating, providing better protection to the device from overvoltage. Furthermore, this device has excellent high frequency performance, lower input capacitance, and a low on-state resistance. These features make it ideal for high-power and high-speed applications.

The working principle of the MUN5135T1 is based on the idea that a current flowing through a forward biased base-emitter junction can control the current in a reverse biased base-collector junction. This is made possible by the manipulation of the base-emitter junction by an input external current and voltage applied to the gate. When a voltage is applied to the gate, electrons and holes are injected into the emitter-base region and recombine there, forming an inversion layer that controls the current in the base-collector junction. Thus, the inversion layer acts like a control valve, allowing current to flow from the collector to the emitter depending on the applied gate voltage.

The MUN5135T1 is ideal for a wide range of applications due to its high voltage breakdown rating, low on-state resistance, and high frequency performance. Some of the applications it can be used for include audio and video designs, DSMs, Class D amplifiers, switching power supplies, and other power management applications. Additionally, this device is also known for its excellent response time, low switching losses, and low gate charge, making it one of the most sought after transistors for high-power and high-speed applications.

The specific data is subject to PDF, and the above content is for reference