MUN5315DW1T1G Allicdata Electronics
Allicdata Part #:

MUN5315DW1T1GOSTR-ND

Manufacturer Part#:

MUN5315DW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN/PNP SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: MUN5315DW1T1G datasheetMUN5315DW1T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: MUN53**DW1
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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MUN5315DW1T1G are pre-biased transistors arrays with excellent voltage ratings and high-level power output. They are designed for a variety of demanding applications, including high-frequency power circuits, low-noise amplifiers, low-cost switching, low power logic devices and consumer audio applications.

MUN5315DW1T1G are built around a complementary pair of bipolar NPN and PNP transistors, a current mirror and an emitter resistor to take advantage of common-emitter gain and high output current capability. The pre-biased transistors array provides a number of advantages over conventional discrete transistor configurations.

The primary benefit of the pre-biased design is minimal component count. With only two transistors, a single current mirror, and a single emitter resistor, the MUN5315DW1T1G takes much less space than its discrete counterparts. The pre-biased transistor array also has a lower noise profile than a conventional discrete circuit. Due to its high current output capability, the pre-biased array is also able to deliver much more power than a discrete circuit with the same component count.

The internal construction of the MUN5315DW1T1G also makes it much more efficient. The pre-biased transistors are wired in parallel, which increases the current output capability. The current mirror also helps to ensure that both transistors are never overloaded and remain within their safe operating range. The current mirror also helps to increase efficiency by keeping the voltage across the emitter resistor constant.

The MUN5315DW1T1G has a wide variety of applications. It is suitable for high-frequency power circuits, low-noise amplifiers, low-cost switching, low-power logic devices, and consumer audio applications. The pre-biased transistor array can be used to replace discrete transistor designs in a wide range of applications and can be used to deliver higher current outputs for the same component count.

In summary, the MUN5315DW1T1G is a pre-biased transistor array with excellent voltage ratings and high-level power output. It is designed for a variety of demanding applications, including high-frequency power circuits, low-noise amplifiers, low-cost switching, low power logic devices, and consumer audio applications. The pre-biased design reduces component count, provides a low noise profile, and increases efficiency by wiring transistors in parallel and utilizing a current mirror. As such, the MUN5315DW1T1G is a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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