| Allicdata Part #: | NE851M33-T3-A-ND |
| Manufacturer Part#: |
NE851M33-T3-A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | CEL |
| Short Description: | TRANSISTOR NPN 2GHZ M33 |
| More Detail: | RF Transistor NPN 5.5V 100mA 4.5GHz 130mW Surface ... |
| DataSheet: |  NE851M33-T3-A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 5.5V |
| Frequency - Transition: | 4.5GHz |
| Noise Figure (dB Typ @ f): | 1.9dB ~ 2.5dB @ 2GHz |
| Gain: | -- |
| Power - Max: | 130mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 1V |
| Current - Collector (Ic) (Max): | 100mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 3-SMD, Flat Leads |
| Supplier Device Package: | 3-SuperMiniMold (M33) |
| Base Part Number: | NE851 |
Description
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The NE851M33-T3-A is an RF bipolar transistor (BJT) that is specifically designed to achieve high output power, low noise figures and linearity, as well as high gain, over the frequency range of 50 - 500 MHz. It is a symmetric-three-lead device, with a collector-base breakdown voltage of 33 Volts, a collector-emitter breakdown voltage of 25 Volts, and an emitter-base breakdown voltage of 5 Volts. This device has a high-current gain cutoff frequency of 11 GHz and a maximum DC power dissipation of 500 mW. The NE851M33-T3-A is well-suited for use in RF communications systems, such as radio broadcast transmitters, wireless communication systems, and radio transmitters and receivers. It can also be used in cell phones, wireless networks, broadband Internet access and distributed antenna systems. The NE851M33-T3-A is manufactured using a dielectric isolation process, which ensures that the device has a very low parasitic capacitance across its terminals. This device also has a low thermal resistance for heat transfer and cooling, making it well-suited for applications that require high power density. The NE851M33-T3-A is designed to operate in a common-emitter circuit configuration. In this configuration, the transistor\'s base terminal is connected to ground and the collector terminal is connected to the AC signal. The emitter terminal is connected to a DC voltage source, which is used to bias the transistor. The bias voltage determines the amount of current that is allowed to flow through the transistor and, in turn, determines the amount of gain and power that the device can provide. The NE851M33-T3-A has several advantages over other RF transistors, including its high power density, low noise and linearity, high-current gain cutoff frequency, and low parasitic capacitance across its terminals. In addition, this device is well-suited for applications requiring high power and performance.The specific data is subject to PDF, and the above content is for reference
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