NE85639-A Allicdata Electronics
Allicdata Part #:

NE85639-A-ND

Manufacturer Part#:

NE85639-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-143
More Detail: RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mou...
DataSheet: NE85639-A datasheetNE85639-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Base Part Number: NE85639
Description

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The NE85639-A is a radio frequency (RF) bipolar junction transistor (BJT) designed to meet the needs of the latest high frequency systems. The transistor is manufactured in a plastic package that provides excellent thermal characteristics, making it suitable for both commercial and industrial applications. The NE85639-A offers excellent performance at high frequencies, with high power gain and very low input capacitance and low resistance, making it ideal for use in high frequency amplifiers and mixer circuits.

A bipolar transistor is a current-operated device with three terminals that produce an output current or voltage proportional to the input current or voltage applied to the two input terminals. The gain of a bipolar transistor is given by the ratio of the change in output current to the change in input current. The NE85639-A is designed to offer high power gain, low input capacitance, and low resistance, making it suitable for applications requiring high power levels and high frequency operation.

The NE85639-A can be used in a range of high-frequency applications, including power amplifiers, mixers, upconverters, power and PLL circuits. The operating frequency range of the device is from 5 MHz to 2 GHz, making it suitable for a wide range of applications. The transistor is suitable for high power applications, with collector current ratings of up to 5 amperes in pulsed mode and 500 mW of power dissipation in continuous operation.

The NE85639-A is manufactured in a plastic package, which provides excellent thermal characteristics. The package is also designed to provide excellent solderability and allows for reliable connections with printed circuit boards. The transistor is RoHS Compliant, making it suitable for use in a variety of consumer and commercial products. The transistor is also available in other packages and can be used in different configurations to increase performance or reduce power consumption.

The NE85639-A is a versatile and reliable transistor that is well-suited for use in a wide range of high frequency applications. Its excellent thermal characteristics, high power gain, low input capacitance, and low resistance make it ideal for use in amplifiers and mixers. The device is available in a plastic package that provides excellent solderability, allowing for reliable connections with printed circuit boards. The transistor is RoHS Compliant, making it suitable for use in consumer and commercial products.

The specific data is subject to PDF, and the above content is for reference

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