NE856M02-AZ

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	6.5GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1GHz
Gain:	12dB
Power - Max:	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89
Base Part Number:	NE856

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Application Field and Working Principle of NE856M02-AZ

NE856M02-AZ is a high power NPN, plastic encapsulated, silicon planar epitaxial transistors which are made to be reliable and proven technology integrated circuit design for Radio Frequency telecommunications. It is designed for VHF, CATV Amplifier, and also RF Power Amplifier applications. This product is also an ideal choice for high power applications in the range of 30 MHz to 500 MHz. NE856M02-AZ is integrated with lateral NPN transistor in typicayally 10V to 20V. Together with the high switching capability, resistance to secondary breakdown, and excellent RF handling capability, this product can perform in any demanding high power situations. Its composite structure, such as the robust metal back, integrated leads, and the plastic encapsulation, can help ensure that this device is reliable and proficient. The NE856M02-AZ has a maximum collector-emitter voltage range of between 10V and 20V and a maximum collector power dissipation of 900W at Tc = 25°C. Within the NE856M02-AZ there is a high-energy barrier that needs to be overcome before current can begin to flow from the emitter to the collector. This energy barrier is known as the base-emitter junction. This junction acts as a diode and it will allow current to flow when a small voltage is applied to the system. The amount of current that will flow through this junction is based on the width of the base and the amount of current that is applied. The base-emitter junction can be used to control the amount of current that is applied to the system, hence allowing it to be used as an amplifier. The NE856M02-AZ also features a Built-in Gate Protection MOSFET which is designed to automatically cut off the base current of the transistor when the Gate Voltage reaches 3.2V. This helps to protect the transistor from damage or destruction due to ESD (electro-static discharge). It is also capable of operating at a wide range of rf frequencies and can be used for both High and Low Frequency applications. The NE856M02-AZ has a low thermal resistance thanks to its high temperature copper leads, which helps to ensure that it can operate at a maximum junction temperature of 150°C. Its high power capability allows for it to be used for applications such as CATV Amplifier, RF Power Amplifier, Broadcast Amplifier, and Mobile Phone Amplifier. It is also capable of providing excellent operation in most High Frequency Applications.The NE856M02-AZ is a high-power RF transistor that is designed to be reliable and provide superior performance in a wide range of applications. It\'s rugged construction, composite structure, and low thermal resistance help to ensure that it can perform in the most demanding power applications. Its built-in Gate Protection MOSFET offers protection against any potential ESD damage, while its wide range of rf frequencies and high power capability make it ideal for a variety of applications.

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