NE85634-T1-RE-A

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NE85634-T1-RE-A is a bipolar junction transistor (BJT) that is used in the radio frequency (RF) field. It was developed by NXP Semiconductor and is available in a three - leaded package. NE85634 is mainly used in the transmitter \'s external power amplification driver circuit and mobile receiver antenna tuning circuit. The device also has excellent characteristics in other fields, such as: high power output, low power consumption and small signal distortion.

The NE85634-T1-RE-A transistors utilize a NPN or PNP structure which allow them to control large currents. The transistor is implemented in an SOT323-3S SMD package and have several useful features such as its rugged design, low noise, and high gain. The NE85634-T1-RE-A transistors are capable of operating at frequencies up to 4 GHz and can handle currents up to 10A. The three leaded package makes wiring the transistor simple and the package is also designed to dissipate heat quickly.

The working principle of the NE85634-T1-RE-A is fairly simple. It consists of three electrodes, which are the collector, emitter and base. When voltage is applied to the base, it creates a small current which flows between the collector and emitter, allowing larger current to flow between them. This is known as transistor action. This phenomenon is used to control larger circuits and allow for power amplification. The amount of current flow between the collector and the emitter can be controlled by varying the amount of voltage applied to the base.

The NE85634-T1-RE-A can be used in several areas for RF amplification. The transistor is especially useful for applications such as wireless communication, mobile communication, radio frequency transceivers, antennas, radio links and digital radio systems. It can also be used in amplifier stages of FM, UMTS, or GSM systems, as well as a wide variety of other applications.

NE85634-T1-RE-A is a highly efficient and reliable transistor that can be used in a variety of RF applications. It is a cost-effective solution that is easy to install and provides excellent thermal performance. The bipolar structure and rugged design make it an ideal choice for all of your RF applications.

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