NE85639R-T1 Discrete Semiconductor Products |
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Allicdata Part #: | NE85639RTR-ND |
Manufacturer Part#: |
NE85639R-T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | TRANS NPN 1GHZ SOT-143R |
More Detail: | RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mou... |
DataSheet: | NE85639R-T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.1dB @ 1GHz |
Gain: | 13.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | NE85639 |
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The NE85639R-T1 belongs to a family of radio frequency (RF) transistors that are also known as bipolar junction transistors (BJT). It is used in various fields such as in tracking, data monitoring and communications systems, as well as for other applications that require low power and high gain. This article will discuss the application field and working principle of NE85639R-T1.
The NE85639R-T1 is designed for use in DC-RF applications where a low noise figure, good stability, and high gain are desired. It supports a wide variety of operations from 1 MHz to 500 MHz, making it suitable for use in a variety of radio transmission systems. This transitor can also be used in power amplifier stages, frequency multipliers, electrical filter circuits and voltage regulators.
The NE85639R-T1 is also suitable for use as a low-power switch or as an amplifier, depending on the current demand. It has a very low noise figure and can operate up to 200 MHz with an effective gain of 10. This transistor also includes a low-frequency oscillator and an inductor, which make it ideal for TV, radio, and radar applications. The device is also suitable for using in touch screens because it provides an interface between the screen and its operating circuits.
The NE85639R-T1 operates on the principle of a junction transistor. In a junction transistor, electrical current is supplied to a base region, where it is modulated by the presence of predetermined materials with varying resistivities. This modulation of current produces a variation in the current flowing through the device, which is termed as the collector current. As the collector current varies, the voltages at different junctions in the device also vary, allowing the device to operate as an amplifier.
The NE85639R-T1 has a wide range of gains and an operating frequency up to 200 MHz. Furthermore, this device is specifically designed to provide good stability and performance across varying temperatures. Its wide input voltage range further allows the device to support high levels of power without overheating or creating noise.
The device has several advantages, such as its low power requirement, wide frequency operation range, low noise figure, good stability, and high gain. Furthermore, it is designed to be used in a variety of applications including power amplifier stages, frequency multipliers, electrical filters circuits, voltage regulators, tracking and monitoring systems, and touch screens. The NE85639R-T1 is a practical and reliable device that can be used to provide enhanced performance in numerous applications.
The specific data is subject to PDF, and the above content is for reference
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