NE851M03-A

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The NE851M03-A is an RF bipolar junction transistor (BJT) designed for use in radio frequency (RF) amplification and switching applications. It is a three-terminal device that consists of two p-type and one n-type semiconductor regions. It was designed to operate in a wide range of frequencies, typically from 50 MHz to 500 MHz, making it useful for applications such as cellular phones, remote access systems, and land mobile radios. It has a high gain with a low noise figure, making it suitable for RF amplifier design.

The NE851M03-A can be used as a common emitter amplifier, common collector amplifier, common base amplifier and as a current switch. In the common emitter configuration, the emitter of the BJT is coupled with a positive voltage, the base is biased using a resistor network and the collector of the BJT is coupled with an output load. By controlling the base-emitter current, the output current magnitude and the output voltage can be controlled.

In the common collector configuration, the collector of the BJT is coupled with a source of power and the base is biased using a resistor network. The emitter of the BJT is connected to the output load, which allows for current or voltage gain depending on the application. In the common base configuration, the base of the BJT is coupled with a source of power, the emitter is biased using a resistor network and the collector is connected to the output load. This configuration can be used for current switching applications.

At higher frequencies, the NE851M03-A operates as a switch, reducing power consumption when it is not in use. This feature is because the device can be biased at its saturation voltage, which causes the BJT to enter the cut-off mode. When the BJT is activated, it can quickly switch to its normal operating mode and provide higher gain.

The NE851M03-A can be used in a variety of applications, including radio receivers, transmitters, linear amplifiers, switching, logic circuits and high frequency RF applications. Its high performance, low noise and low power consumption make it suitable for use in high-frequency applications. The device is versatile and robust, making it suitable for use in many different applications.

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