NE856M02-T1-AZ Discrete Semiconductor Products

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The NE856M02-T1-AZ is a higher power silicon NPN transistor produced by NEC, suitable for use in mobile radio applications. It features a high gain, high frequency, and high power handling capabilities. This transistor is rated for use at 300 mW, and is capable of operating over a wide range of frequencies from 500 MHz to 3GHz. The NE856M02-T1-AZ is a bipolar junction transistor (BJT) that utilizes a double diffused silicon technology to produce more efficient, higher speed power transistors. This device is designed for use in radio frequency (RF) applications such as radio receivers, transmitters, amplifiers, and switching circuits.

The operation of the NE856M02-T1-AZ is based on the fundamental principles of a bipolar junction transistor, which involves the movement of electric current through the transistor’s semiconductor material when a bias voltage is applied. The current is then amplified and can be used to drive a load. Typically, a bipolar junction transistor requires two external connections to its base voltage, and one to its collector. The NE856M02-T1-AZ is an NPN transistor, which means that the current flows from the collector to the emitter. The electric current is controlled by the emitter-to-base voltage, with the higher the voltage, the higher the current that can be drawn from the collector.

One of the key advantages of the NE856M02-T1-AZ is its ability to provide a high gain at very high frequencies. This is due to the use of a double diffused silicon process, which minimizes the effects of parasitic capacitances and allows for a high gain at frequencies in the range of 500 MHz to 3GHz. The transistor also features high stability and outputs sufficient power to drive most RF applications.

The NE856M02-T1-AZ is suitable for use in mobile radio applications such as base stations, repeaters and amplifiers, as well as other applications where high power and high frequency performance are required. It is also ideal for use in circuit designs that require low noise and reliable operation.

In summary, the NE856M02-T1-AZ is a high power silicon NPN transistor manufactured by NEC, suitable for use in RF applications such as radio receivers, transmitters, amplifiers, and switching circuits. It features a high gain, high frequency, and high power handling capabilities, thanks to the use of a double diffused silicon process. It is rated for use at 300 mW, and is capable of operating over a wide range of frequencies from 500 MHz to 3GHz. This makes it suitable for use in mobile radio applications, as well as other applications where high power and high frequency performance are required.

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