NE85633-T1B-R23-A

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NE85633-T1B-R23-A is a high-speed bipolar transistor that is used in wide range of applications such as microwave communications, high-speed switching applications, and high-power amplifiers. It is a part of the NXP Semiconductors portfolio and is available in an 8-pin T1-B package. This transistor is suitable for use in applications requiring high voltages, low noise, high power gain, and fast switching speed.

In terms of construction, the NE85633-T1B-R23-A is a combination of two p-type semiconductor layers separated by one n-type semiconductor layer. The p-type layers are called emitter and collector while the n-type layer is called the base. The emitter and collector layers are electrically connected to each other by the base layer.

The NE85633-T1B-R23-A operates by controlling the large current flowing from the collector to the emitter by controlling the small electronic signal applied to the base terminal. When a small current flows through the base of the transistor, it allows a large amount of current to flow from the collector to the emitter. This effect is called current amplification.

The NE85633-T1B-R23-A is suitable for a wide range of high-frequency applications such as amplifiers, oscillators and modulators. It is capable of providing exceptional gain and gain flatness at frequencies up to 2 GHz. It also has wide- frequency phase noise performance and high-speed linearity.

The NE85633-T1B-R23-A has excellent RF parameters, such as low-noise figure, wide frequency range, high linearity, and exceptional gain. Its noise figure is typically 1.5 dB and it has a wide frequency range of 0.1 to 2.0 GHz. With its high linearity, the NE85633-T1B-R23-A is suitable for use in low-distortion, wideband amplifier applications. It also has excellent gain flatness, typically 11 dB up to 1 GHz.

The NE85633-T1B-R23-A is also capable of providing low power consumption and high efficiency. It has a total dissipation of 0.5 W at 25°C and a power-added efficiency of 60%. Additionally, it features low gate-source capacitance, typically less than 25 pF, and low gate leakage, typically better than 5 uA.

The NE85633-T1B-R23-A is ideal for use in high-speed switching and amplifier applications. Its fast switching speed and low noise performance make it ideal for applications such as pulse and data transmission, UART/USB interface designs, and digital camera designs. In addition, its robust construction and high power-added efficiency make it suitable for use in high-efficiency power amplifiers.

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