NE85633L-A Allicdata Electronics
Allicdata Part #:

NE85633L-A-ND

Manufacturer Part#:

NE85633L-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: TRANSISTOR NPN 1GHZ SOT-23
More Detail: RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mou...
DataSheet: NE85633L-A datasheetNE85633L-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: NE85633
Description

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NE85633L-A is a monolithic high performance silicon bipolar transistor with integrated capacitor. It is primarily used in RF power amplifiers. This device is designed for medium to high power applications in the frequency range of 100MHz to 1GHz. It has a high power gain, low noise figure and high efficiency, making it suitable for use in amplifiers for both cellular communications and broadcast standard applications.

The NE85633L-A is constructed from NPN silicon bipolar technology, providing a medium-level DC gain and high power gain over the frequency range of 100MHz to 1GHz. It is thus suitable for applications such as cellular communications, RF cognition, and broadcast standards.

The NE85633L-A is a fully integrated Silicon bipolar transistor. The device includes an integrated capacitor, which helps maintain stability during operation and helps to reduce output impedance. The transistor also has an integrated voltage regulator, which helps to maintain the performance of the device under varying voltage supply conditions.

The NE85633L-A has a high-power gain of 8.4dB at 900MHz, which makes it suitable for a wide range of applications. The device also has a low noise figure of 2.3 dB, making it well suited for use in low-noise amplifier designs. The device also has a high efficiency of up to 60%, making it a suitable choice for applications where power savings are important.

The NE85633L-A is packaged in a hermetic package, which helps to protect the device from environmental conditions. The device is compatible with standard lead-free SMT assembly processes. The device is rated for operation in temperatures up to 125°C.

The NE85633L-A is also RoHS compliant, and is available in both commercial and industrial temperature ranges. This ensures that the device can be used in a wide variety of applications, with a high level of environmental performance.

The NE85633L-A is a robust, high performance transistor suitable for medium to high power RF applications. Its integrated capacitor and voltage regulator provide better stability and flexibility, while its hermetic package provides reliable protection against environmental conditions. Its high power gain and low noise figure make it suitable for both cellular communications and broadcast standard applications, while its high efficiency helps to reduce power consumption.

The specific data is subject to PDF, and the above content is for reference

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