NE85619-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE85619-A is a Radio Frequency (RF) bipolar junction transistor (BJT) designed to operate in the microwave frequency range. This transistor is built on an industry-standard plastic package and is capable of providing higher gain and better linearity than comparable prior-generation transistors. The NE85619-A is suitable for a wide range of RF amplification applications including wireless communication systems, satellite communication systems, data-handling systems, digital signal processing (DSP) systems, and radio frequency and digital signal processing (RF/DSP) circuits.

The NE85619-A has a flat frequency response and provides excellent inter-modulation distortion, making it suitable for many of today’s most challenging RF signal applications. With its smaller size and reduced cost, this transistor is ideal for use in space-constrained designs. The transistor is rated for peak output powers up to 28 dBm and has a noise figure of 2.2 dB, ideal for RF and DSP applications.

The working principle of the NE85619-A is based on the bipolar junction transistor (BJT), with two junctions connecting three semiconductor layers. The basic operation of the BJT is based on the flow of base current and the generation of emitter and collector currents. Base current flows through the emitter-base junction and creates a voltage drop across the base-collector junction, which results in emitter and collector current. The emitter-collector current is proportional to the base current, with the collector current much larger than the emitter current. This current transfer action is known as current gain, and is specified by the datasheet as the current gain factor beta (β).

The NE85619-A transistor is also capable of providing linearity in its output voltage as a function of input current. This linearity is known as transistor gain, and is also specified by the datasheet as the transconductance gain (gm). A higher transconductance gain will result in a more linear response over the frequency range. This is important in applications such as Low-Noise Amplifiers (LNAs) and Frequency-Adaptive Amplifiers (FFAs) where linearity is essential for optimal performance.

The NE85619-A transistor is an excellent choice for RF applications needing higher gain and better linearity than those available with prior-generation BJTs. It is capable of providing improved performance in the frequency range for a wide range of applications, including wireless communication systems, satellite communication systems, data-handling systems, DSP systems, and RF/DSP systems. Its small size and lower cost make it an attractive choice for designs requiring space-constrained solutions. Furthermore, its high-current gain factor, low noise figure and excellent linearity make it a highly desirable choice for many of today’s most challenging RF signal applications.

The specific data is subject to PDF, and the above content is for reference