NE85630-R24-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	9dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	NE85630

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NE85630-R24-A Application Field and Working Principle:The NE85630-R24-A is a bipolar junction transistor (BJT) that is mainly used in applications requiring high frequency operation and can handle signals up to 24GHz. It is commonly used in RF amplifiers, low noise amplifiers, transmitters, and receivers. Its important characteristics are variable capacitance, high degree of temperature stability, and wide gain bandwidth.This device is composed of two PN diodes. One PN diode is connected between the collector and emitter, while the other PN diode is connected between the base and emitter. The first diode assists in controlling the current gain, while the second diode ensures that the voltage stays constant. When a voltage is applied to the base, it is amplified and creates a current flow through the collector loop.The gain of the NE85630-R24-A can be controlled using two external pins. One pin, the capacitor, changes the capacitance of the transistor and affects the gain. The other pin is connected to an external power source, such as a voltage divider circuit, to increase the output current.The NE85630-R24-A is also very stable under changing temperature conditions. It maintains its high degree of performance at temperatures from -55°C to 150°C. It also has a high power output, with power handling up to 25W in ideal conditions.To summarize, the NE85630-R24-A is a reliable, high frequency BJT suitable for applications requiring high current or voltage output. It has a wide gain bandwidth and is highly temperature resistant, allowing it to be used in extreme conditions. It is capable of handling signals up to 24GHz and has a high power output of up to 25W.

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