NE85630-A

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The NE85630-A is a high-performance, high-frequency amplifier implemented with advanced bipolar technology. It has an optimal performance in a wide frequency range, from 380 MHz to 2700 MHz. It is designed for use in commercial and military RF systems, such as cellular base station and point-to-point microwave links. It features an extended gain block of variable gain from 0 to 30 dB with an output from +6 to +10 dBm. Additionally, it has a wide input signal range from -30 dBm to +10 dBm and a low noise figure of 4.9 dB.

The NE85630-A is a multi-stage RF circuit comprised of bipolar transistors, inductors, capacitors, and diodes combined in a highly efficient package. The amplifier has the ability to handle large signals without distortion or gain compression. It is capable of providing a wide dynamic range of up to 40 dB while providing excellent linearity across the entire input frequency range.

The NE85630-A is an integrated circuit with several external components including bypass-to-ground and supply decoupling capacitors. Its internal transistors and inductors are optimized for high-frequency performance and optimized to produce low noise and high gain. The transistors are matched for temperature stability, providing consistent performance over a broad temperature range. Additionally, the device features gain control for linear operation and thermal runaway protection for safe operation.

The NE85630-A is designed for applications requiring high linearity and high gain under extremely low noise conditions. It is ideal for applications including high-frequency radioLinks, point-to-point radioLinks, cellular base stations, and other wideband applications. It is also well suited for multi-carrier systems, beamforming, and wideband signal processing systems due to its capability to provide uninterrupted operation at a wide range of input power levels.

The NE85630-A is an efficient and reliable device suitable for an array of RF amplifier applications, providing superior performance with low power consumption and low noise characteristics. It is an excellent choice for high frequency, high power applications while being affordable with a wide range of gains and input levels.

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