Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	9dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	125 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	NE85630

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NE85630-T1-R25-A Application Field and Working Principle

NE85630-T1-R25-A is a type of RF complementary bipolar transistor, a component of radio frequency applications. The NE85630-T1-R25-A is a high power device with a power output of up to 200 watts, making it suitable for use in a wide variety of RF products.

Features

The NE85630-T1-R25-A has a variety of features that make it suitable for RF application. These features include:

• High gain of up to 30dB.
• Power output up to 200W.
• Flat frequency response between 0.8 and 2.4GHz.
• Low noise figure.
• High power-added efficiency (PAE).

Application Field

The NE85630-T1-R25-A is typically used in commercial and military radio systems where the need for high power and high frequency operation is required. Examples of applications include:

• Wireless communication systems, such as local area networks (LANs), cellular phone networks, GPS, and satellite systems.
• High-power radio jamming and detection systems.
• Broadcast radio and TV transmitters.
• Radar systems.

Working Principle

The NE85630-T1-R25-A is composed of two distinct transistors, each consisting of its own collector, base, and emitter. An input signal is applied to the base of one of the transistors, and its conductance is modulated to achieve gain. The output from the collector of this transistor is then fed to the base of the other transistor, to modulate its conductance and provide additional gain. By cascading these two transistors, a high voltage gain is achieved. The NE85630-T1-R25-A can also be used in linear applications, such as amplifying an input signal to a higher power output level. In this case, a linear signal is fed to the base of one of the transistors, which amplifies it to a higher voltage level. This output is then fed to the base of the other transistor, to provide additional amplification. The output from the second transistor is then taken as the amplified signal.

Conclusion

The NE85630-T1-R25-A is a high power RF bipolar transistor, suitable for a wide range of RF applications. Its features make it suitable for use in radio systems, wireless communication systems, broadcast transmitters, and radar systems. The NE85630-T1-R25-A is composed of two transistors, which can be used either in a cascaded configuration for gain, or in a linear configuration for amplification.

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