NE85639R-T1-A Discrete Semiconductor Products

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NE85639R-T1-A is a silicon-based RF bipolar junction transistor (BJT) designed for use in commercial and industrial applications.

In terms of electrical characteristics, the transistor features a wide range of power supply voltages, a high gain of 17 dB and a high breakdown voltage of 50 V. Its low collector-emitter saturation voltage makes the transistor suitable for a variety of applications such as switching, amplification, signal attenuation and signal routing. It also has a low input capacitance and a low gate-source capacitance, which make the NE85639R-T1-A suitable for use in high-frequency circuits. In addition, it can handle high peak currents without overheating and has excellent thermal stability, making it suitable for use in high-power circuits as well.

The NE85639R-T1-A works on the principle of a BJT, which is basically a three-terminal device consisting of a base, a collector and an emitter. The base is a semiconductive material that is heavily doped with one type of impurity, which forms the conduction channels of the BJT. The collector and emitter are connected to the base and use the dopants to form a low-resistance path for current flow. When an electric current is applied to the base, it in turn controls the flow of electrons between the collector and the emitter. This conduction action creates a voltage drop across the collector-emitter junction and creates a forward-biased curvilinear operation, which produces a relatively larger output current than the input current (i.e. the transistor amplifies the current).

In terms of applications, the NE85639R-T1-A is primarily used in a variety of commercial and industrial applications such as radio transmitters, communication systems, base stations and wireless applications. The transistor’s high gain and wide range of power supply voltages make it ideal for use in many types of RF circuits. It can also be used in amplification and signal routing applications, as well as in switching circuits. In addition, the low collector-emitter saturation voltage of the transistor makes it an ideal choice for use in high-power circuits, such as those found in solar panels, voltage regulators and medical equipment.

In summary, the NE85639R-T1-A is a silicon-based RF bipolar junction transistor (BJT) designed for use in commercial and industrial applications. It offers a wide range of power supply voltages, a high gain of 17 dB and a high breakdown voltage of 50 V. Its low collector-emitter saturation voltage makes it suitable for a variety of applications, such as switching, amplification, signal attenuation and signal routing. In addition, the transistor’s high gain and wide range of power supply voltages make it ideal for use in many types of RF circuits, as well as in high-power circuits. It is a reliable and efficient choice for various commercial and industrial applications.

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