Allicdata Part #: | NE85639-T1-R28-A-ND |
Manufacturer Part#: |
NE85639-T1-R28-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | SAME AS 2SC4093 NPN SILICON AMPL |
More Detail: | RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mou... |
DataSheet: | NE85639-T1-R28-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
Gain: | 13dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143 |
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NE85639-T1-R28-A is a type of bipolar transistor utilized in a wide variety of applications. It is typically classified as a radio frequency (RF) transistor, and is used in various settings involving analog or digital signal processing. This type of transistor is especially useful in its ability to deliver high-frequency power output while also remaining relatively small in size.
A bipolar transistor is an electronic component that consists of three parts, the collector, base, and emitter. It works by amplifying or switching electronic signals using bipolar technology instead of the more common field effect transistors. When voltage is applied to the base, it controls the current flowing through the collector and emitter, making it a very useful component for many applications.
The NE85639-T1-R28-A transistor is used mainly for RF applications, including cellular phones and other devices. It is also often used in radio receivers and transmitters, amplifiers, and other devices that require high frequency power output. A number of other applications also take advantage of this device’s ability to switch signals, including switched-mode power supplies, TV tuners, IR remote controls, and data converters.
The NE85639-T1-R28-A transistor works on the principle of negative differential resistance. This means that when a positive voltage is applied to the base, the current flowing through the collector and emitter decreases. This causes a decrease in power output, which is useful in high-frequency applications where power density and size is critical.
This device is also capable of high-voltage switching, which means that it is well-suited for applications requiring high-voltage operation. It also has good thermal stability and can withstand temperatures up to 150 degrees Celsius. Additionally, the NE85639-T1-R28-A has a frequency range of 10 MHz to 10 GHz, making it an ideal device for radio circuit design and other applications.
The NE85639-T1-R28-A is a versatile component that is used in a variety of settings, both in digital and analog signal processing. It is an ideal device for RF applications and other settings that require high-frequency power output, switching, and thermal stability. Its ability to operate at high voltage also makes it a useful component, making it a useful choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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