NE85630-T1-A Discrete Semiconductor Products

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NE85630-T1-A is a type of high frequency bipolar transistor designed to amplify power in RF applications. This transistor has a low noise figure and high output power, making it suitable for a wide range of applications, including RF power amplifiers, power converters, frequency synthesizers, and communication systems.

NE85630-T1-A is designed as a two-stage bipolar transistor with an integrated NPN collector and PNP emitter. This structure allows for a wide range of operating frequencies, from DC to 2.4 GHz. The collector and emitter are connected in series to form the active region of the transistor, allowing for a high output power when the gate is driven. The gate is connected to the base, which is then connected to the source voltage. This provides the transistor with the necessary bias voltage for it to function properly.

The working principle of the NE85630-T1-A is similar to other bipolar transistors, with the structure and components used to amplify the input signal. The base-emitter junction is forward biased, which allows carriers to flow from the emitter to the collector. This increases the current flow and allows for the transistor to be used in a current-amplifying control circuit. As the output current increases, the voltage across the collector-emitter junction will increase as well, resulting in an amplified signal.

The power dissipation of the NE85630-T1-A transistor varies depending on the operating conditions and the number of transistors in use. Typically, the power dissipation is between 0.125 and 0.25 Watts. The maximum current through the collector-emitter junction is 1 Amp and the maximum voltage is 40 Volts. The maximum frequency of operation is 2.4 GHz, and the maximum power gain is 14 dB.

The NE85630-T1-A is commonly used in high frequency applications such as frequency synthesizers, RF power amplifiers, communications systems and power converters. It is also suitable for use in automotive and industrial applications, as well as field effect transistors (FETs), embedded controllers and other digital applications. The low noise figure and high output power make it an ideal choice for these types of applications.

In conclusion, the NE85630-T1-A is a high frequency bipolar transistor that is suitable for a variety of applications due to its low noise figure, high power output and wide operating frequency range. It is especially useful in RF power amplifiers, communications systems and power converters and is capable of amplifying input signals to generate a higher-powered output signal. The power dissipation of the NE85630-T1-A is generally low, but still high enough for reliable operation, and the maximum operating frequency is 2.4 GHz. The NE85630-T1-A is a reliable choice for a wide range of applications.

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