NE85618-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	6.5GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1GHz
Gain:	13dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	SOT-343

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NE85618-A application field and working principleThe NE85618-A is a high-performance, single-stage RF power amplifier that is an earlier application field used in mobile communications. It has a good design which combines long-term stability with high gain, low noise, and good linearity. Moreover, its working principle makes it suitable for use in RF applications such as long-distance transmission and base station amplifications.The NE85618-A transistor is a bipolar junction transistor (BJT) with integrated thermal sensing, capable of operating at frequencies up to 1 GHz. It is built on a gallium-arsenide wafer to improve its electron emission characteristics and reduce the noise figure. The transistor consists of three regions, namely the emitter, base, and collector. These regions are formed by doping with different types of atoms. It has a low noise figure and can be used for a wide range of applications, including wireless transmission products, base station amplifiers, and applications where high power performance is needed. The NE85618-A has a collector current of up to 250ma and a collector-emitter voltage of up to 4V. It also has a low thermal impedance, making it suitable for operation at high temperatures. It also has a low input and output capacitance, which reduces its ability to pick up unwanted noise. The working principle of the NE85618-A is based on the interaction between the bipolar junction transistor and its controllable current. When current passes through it, electrons move from the base to the collector and from the collector to the emitter, creating a one-way current flow. This current flow creates a voltage drop across the transistor. The voltage at the base and collector can be adjusted to regulate the current flow and the power output of the transistor. The NE85618-A has a good design which combines long-term stability with high gain, low noise, and good linearity. This makes it ideal for use in applications requiring high frequency, high-power performance. The NE85618-A also has a good thermal dissipation, which allows it to be used in applications which require long-term operation at high temperatures. In conclusion, the NE85618-A is a high-performance and durable transistor that is used in many applications. It is suitable for use in RF applications such as long-distance transmission, base station amplifications, and wireless transmission. Its low noise figure and thermal dissipation characteristics make it ideal for applications which require long-term operation at high temperatures. Its working principle is based on the interaction between the transistor and its controllable current, and it can deliver power output depending on the adjusted voltage at the base and collector.

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