NE85630-T1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain:	6dB ~ 12dB
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	NE85630

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NE85630-T1 is a high-frequency surface mount bipolar transistor with a wide variety of uses. It is widely used in areas such as radio frequency (RF) applications, high frequency amplifiers and analog switching. This device is ideal for use in radio products such as radio broadcast, cordless phone, cellular phone and wireless data communications.

Application Field

The NE85630-T1 is used in a wide variety of radio frequency (RF) applications such as radio broadcast, cordless phone, cellular phone and wireless data communications. It is designed for power amplifier applications and can provide up to 8 dB of gain when driven at 1 watt. The transistor can also be used as an amplifier for low-distortion audio signals.The NE85630-T1 is also suitable for use in high frequency analog switching applications, such as communication systems and industrial automation processes. It provides very low on-state resistance, low noise, and fast switching characteristics. It is well-suited to switching applications where high frequency operation is required.

Working Principle

The NE85630-T1 is a high-frequency surface mount bipolar transistor. A bipolar transistor is a three-terminal semiconductor device consisting of two p-n junctions which can be used as either an amplifier or a switch. The device is operated by providing an input signal to the base terminal via the emitter terminal, which changes the current flowing through the collector and emitter terminals.When operating as an amplifier, the transistor is operated in its active region, with the collector current being proportional to the base current. The current gain of the device is determined by the ratio of the collector current to the base current, also known as the beta (β) of the device. In this region, the transistor will provide maximum power gain and the output voltage of the amplifier is usually determined by the collector current and the output impedance of the transistor.When operating as a switch, the transistor is operated in its saturation region, at a constant collector current. In this region, the collector-emitter voltage drop is low, resulting in a low off-state resistance. The switching speed is determined by the speed at which the base current can be changed, which is determined by the speed of the drive circuitry.

Conclusion

The NE85630-T1 is a high-frequency surface mount bipolar transistor with a wide array of applications. It can be used in both amplifying and switching applications, and can be used in a variety of radio frequency (RF) applications such as radio broadcast, cordless phone, cellular phone and wireless data communications. The NE85630-T1 provides very low on-state resistance, and can provide up to 8 dB of gain when operated as an amplifier. It is well-suited for applications where high frequency operation is required.

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